| PART |
Description |
Maker |
| RJH60D2DPE-00-J3 RJH60D2DPE |
20 A, 600 V, N-CHANNEL IGBT SC-83, LDPAK-3
Silicon N Channel IGBT Application: Inverter
|
NXP Semiconductors N.V.
Renesas Electronics Corporation
|
| RJH60C9DPD-00-J2 RJH60C9DPD |
10 A, 600 V, N-CHANNEL IGBT SC-63, DPAK-3
Silicon N Channel IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH60D1DPP-M010 |
Silicon N Channel IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| SKIIP16GH066V1 |
H-bridge inverter 56 A, 600 V, N-CHANNEL IGBT
|
Advanced Interconnections, Corp.
|
| RJH60D5DPK RJH60D5DPK-00-T0 |
Silicon N Channel IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| TLP351 |
Inverter for Air Conditioner IGBT/Power MOS FET Gate Drive Industrial Inverter
|
Toshiba Semiconductor
|
| SKIIP11AC12T4V1 |
3-phase bridge inverter 12 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| SGE2697-1 |
inverter transformer for CCFL inverter power supply
|
MICROSEMI[Microsemi Corporation]
|
| HCS05DMSR FN3557 HCS05MS HCS05D HCS05HMSR HCS05K H |
Inverter, Hex, Open Drain, Rad-Hard, High-Speed, CMOS, Logic
From old datasheet system
JFET-N-CHANNEL SWITCH
Radiation Hardened Hex Inverter with Open Drain HC/UH SERIES, HEX 1-INPUT INVERT GATE, UUC14
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current Min, Idss:50mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Current Rating:50mA; Voltage Rating:30V
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
HARRIS SEMICONDUCTOR
|
| GT40Q323 |
Silicon N Channel IGBT / Voltage Resonance Inverter Switching Application
|
Toshiba Semiconductor
|
| ST333C..LSERIES 2695 ST333C04LFM0 ST333C08LFM0 ST3 |
Stratix II FPGA 130K FBGA-1508 800V230A逆变晶闸管采用TO - 200AC（乙，北辰）封装
INVERTER GRADE THYRISTORS
From old datasheet system
400V 1230A Inverter Thyristor in a TO-200AC (B-Puk) package
800V 1230A Inverter Thyristor in a TO-200AC (B-Puk) package
|
STMicroelectronics N.V.
International Rectifier
|
