PART |
Description |
Maker |
APT19F100J |
1000V, 19A, 0.46Ω Max, trr ?70ns
|
Microsemi Corporation
|
APT10050JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 19A 0.500 Ohm
|
Advanced Power Technology
|
1SS303 |
Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX.
|
TY Semiconductor Co., Ltd
|
STD19NE06L |
N - CHANNEL 60V - 0.038 ohm - 19A - TO-251/TO-252 STripFET POWER MOSFET -通道60V 0.038欧姆- 19A TO-251/TO-252 STripFET的功率MOSFET N-CHANNEL POWER MOSFET
|
STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
STP19NB20 STP19NB20FP STB19NB20-1 |
N-CHANNEL 200V - 0.15ohm - 19A - TO-220/TO-220FP/I2PAK PowerMESH?/a> MOSFET N-CHANNEL 200V - 0.15ohm - 19A - TO-220/TO-220FP/I2PAK PowerMESH⑩ MOSFET N-CHANNEL 200V - 0.15ohm - 19A - TO-220/TO-220FP/I2PAK PowerMESH MOSFET N-CHANNEL 200V 0.5 OHM 19A TO-220/TO-220FP/I2PAK POWERMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Receptacle With A Wire Wrap Tail Silicon Power Rectifier Diode / 40 Amp Silicon Power Rectifier Diode 40 Amp NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp 40 A, 300 V, SILICON, RECTIFIER DIODE 40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc. NTE[NTE Electronics]
|
STGW19NC60WD STGP19NC60WD |
N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH?/a> IGBT N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH⑩ IGBT
|
STMicroelectronics
|
FDP19N4012 |
N-Channel MOSFET 400V, 19A, 0.24Ω
|
Fairchild Semiconductor
|
FDA18N50 |
N-Channel UniFETTM MOSFET 500V, 19A, 265m
|
Fairchild Semiconductor
|
04F6326 04F8828 04F8908 04F8804 |
WIDERSTAND DRAHT EMAILL 2R0 1000V 300W WIDERSTAND DRAHT EMAILL 3R1 1000V 300W WIDERSTAND DRAHT EMAILL 8R0 1000V 300W WIDERSTAND线材EMAILL 8R0 1000V 300W WIDERSTAND DRAHT EMAILL 10R0 1000V 300W
|
Electronic Theatre Controls, Inc.
|
155-1370 |
SINGLEMODE FIBER PATCH CABLE, PVC SC-LC 15M 1600-19A-K1
|
International Light Technologies Inc. GILWAY[Gilway Technical Lamp]
|