PART |
Description |
Maker |
TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
BF1205 |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
|
BF1206 |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET MOS Field Effect Transistor N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix Vishay Telefunken
|
BF998RAW-GS08 BF998RBW-GS08 BF998A-GS08 BF998RA-GS |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
VISHAY SEMICONDUCTORS Vishay Siliconix
|
MTMC8E28 |
Dual N-channel MOS FET
|
Panasonic
|
3SK290 |
Silicon N Channel MOS FET Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
BF1105R |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
BF1109 BF1109R BF1109WR |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
BF1109WR BF1109 BF1109R |
N-channel dual-gate MOS-FETs
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|