| PART |
Description |
Maker |
| MMIX1F420N10T |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXFN170N25X3 |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXFN110N85X |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTQ69N30PM |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXFH120N25T |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
|
IXYS Corporation
|
| IXTA3N120HV |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTA340N04T4 IXTA340N04T4-7 |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
|
IXYS Corporation
|
| IXTN62N50L |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IRFF210 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF)
|
International Rectifier
Intersil Corporation
|
| IXFT150N20T IXFH150N20T |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
|
IXYS Corporation
|
| IXFV26N60P IXFV26N60PS |
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated 26 A, 600 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
