PART |
Description |
Maker |
IPP35CN10NG IPP35CN10NG10 IPD35CN10NG IPB35CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPSH6N03LB |
OptiMOS2 Power-Transistor
|
Infineon Technologies
|
BSC032N03S |
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
IPB16CN10NG IPP16CN10NG10 IPI16CN10NG IPD16CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP06CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP05N03LBG IPP05N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP10N03LBG IPP10N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPD06N03LBG |
OptiMOS2 Power-Transistor 的OptiMOS2功率晶体
|
Infineon Technologies AG
|
BSO150N03 |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 15mOhm, 9.1A, LL, dual OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSR202N |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
IPU07N03LA |
OptiMOS®2 - Power packages OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ?的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员?
|
Infineon Toshiba, Corp.
|
BSR802N |
Optimos2 Small-Signal-Tansistor N-channel Avalanche rated
|
TY Semiconductor Co., L...
|