PART |
Description |
Maker |
AM41DL32X4GB70IS AM41DL32X4GB70IT AM41DL32X4GB85IS |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices] SPANSION
|
M420000061 AM42DL3224GB25IT AM42DL3224GB30IT AM42D |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
INF8582E |
256 Х 8 BIT STATIC CMOS EEPROM WITH I2С-BUS. ( ANALOG - MICROCIRCUIT PCF8582Е, F.PHILIPS). 256 ? 8 BIT STATIC CMOS EEPROM WITH I2?-BUS. ( ANALOG - MICROCIRCUIT PCF8582?, F.PHILIPS).
|
Integral Corp.
|
AM41PDS3224DB35IS AM41PDS3224DB40IS AM41PDS3224DT1 |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位).8伏的CMOS只,同时操作,页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位),静态存储器 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位)1.8伏的CMOS只,同时操作,页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位),静态存储器 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Advanced Micro Devices, Inc.
|
MN1203 |
256-bit CMOS static RAM
|
Panasonic Semiconductor
|
MN1203 |
256-Bit CMOS Static RAM
|
Panasonic
|
CAT24C44PI-TE13 CAT24C44P-TE13 CAT24C44PA-TE13 CAT |
256-Bit Serial Nonvolatile CMOS Static RAM
|
CATALYST[Catalyst Semiconductor]
|
AM42DL6404G AM42DL6404G85IS AM42DL6404G85IT AM42DL |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
|
SPANSION[SPANSION] AMD[Advanced Micro Devices]
|
IDT72V8980 IDT72V8980DB IDT72V8980J IDT72V8980PV I |
From old datasheet system 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256 256 x 256 TSI, 8 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology IDT
|
CY62256NLL-55SNXIT |
256 K (32 K x 8) Static RAM
|
Cypress Semiconductor
|
MWS5101 MWS5101A MWS5101ADL3 MWS5101AEL2 MWS5101AE |
256-Word x 4-Bit LSI Static RAM(1K大规模集成电路静态RAM) 256字4位LSI的静态RAM(每1000大规模集成电路静态内存) LJT 6C 6#20 SKT WALL RECP Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:11-35 RoHS Compliant: No From old datasheet system
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|