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NTE56065 - TRIAC, 600VRM, 12A, High Commutation TRIAC 600VRM 12A High Commutation

NTE56065_449806.PDF Datasheet


Part No.	NTE56065
Description	TRIAC, 600VRM, 12A, High Commutation TRIAC 600VRM 12A High Commutation
File Size	20.36K / 2 Page
Maker	NTE[NTE Electronics]
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Full text search : TRIAC, 600VRM, 12A, High Commutation TRIAC 600VRM 12A High Commutation

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Z8916924VSC Z8916520VSC	8-BIT MICROCONTROLLER Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:12A; Gate Trigger Current Max, Igt:50mA 8位微控制	ON Semiconductor
Q6025G Q6025J6 Q6025K6 Q6025L5 Q6025L6 Q6025L9ALT	TRIAC\|600V V(DRM)\|40A I(T)RMS\|TO-208AA TRIAC\|600V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 12A条口（T）的有效值\|20 TRIAC\|200V V(DRM)\|40A I(T)RMS\|TO-218 可控硅\| 200伏五（DRM）的\| 40A条口（T）的有效值\|18 TRIAC\|600V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 12A条口T）的有效值\|20 Transient Voltage Suppressor Diodes 可控硅\| 200伏五（DRM）的\| 5A条口（T）的有效值\|20 TRIAC\|600V V(DRM)\|15A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 15A条口（T）的有效值\|20 Transient Voltage Suppressor Diodes 可控硅\| 400V五（DRM）的\| 25A条口（T）的有效值\|20 TRIAC\|600V V(DRM)\|4A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 4A条口（T）的有效值\|20 Transient Voltage Suppressor Diodes 可控硅\| 800V的五（DRM）的\| 12A条口（T）的有效值\|20 TRIAC\|500V V(DRM)\|4A I(T)RMS\|TO-220 可控硅\| 500V五（DRM）的\| 4A条口T）的有效值\|20 TRIAC\|400V V(DRM)\|3A I(T)RMS\|TO-202 可控硅\| 400V五（DRM）的\| 3A条口（T）的有效值\|02 TRIAC\|400V V(DRM)\|4A I(T)RMS\|TO-220 可控硅\| 400V五（DRM）的\| 4A条口（T）的有效值\|20 TRIAC\|200V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 200伏五（DRM）的\| 12A条口（T）的有效值\|20 TRIAC\|400V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 400V五（DRM）的\| 12A条口（T）的有效值\|20 TRIAC\|400V V(DRM)\|40A I(T)RMS\|TO-218 可控硅\| 400V五（DRM）的\| 40A条口（T）的有效值\|18 TRIAC\|400V V(DRM)\|10A I(T)RMS\|TO-220 可控硅\| 400V五（DRM）的\| 10A条口（T）的有效值\|20 TRIAC\|600V V(DRM)\|40A I(T)RMS\|TO-218 可控硅\| 600V的五（DRM）的\| 40A条口（T）的有效值\|18 TRIAC\|800V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 800V的五（DRM）的\| 12A条口（T）的有效值\|20 THYRISTOR MODULE\|TRIAC 晶闸管模块\|可控 TRIAC\|800V V(DRM)\|15A I(T)RMS\|TO-220 可控硅\| 800V的五（DRM）的\| 15A条口（T）的有效值\|20 Transient Voltage Suppressor Diodes 可控硅\| 200伏五（DRM）的\| 8A条口（T）的有效值\|20 TRIAC\|400V V(DRM)\|4A I(T)RMS\|TO-202 可控硅\| 400V五（DRM）的\| 4A条口（T）的有效值\|02 Transient Voltage Suppressor Diodes 可控硅\| 400V五（DRM）的\| 8A条口（T）的有效值\|20 TRIAC\|600V V(DRM)\|8A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 8A条口（T）的有效值\|20 TRIAC\|200V V(DRM)\|8A I(T)RMS\|TO-220 可控硅\| 200伏五（DRM）的\| 8A条口（T）的有效值\|20 TRIAC\|400V V(DRM)\|8A I(T)RMS\|TO-220 可控硅\| 400V五（DRM）的\| 8A条口（T）的有效值\|20 Transient Voltage Suppressor Diodes 可控硅\| 700V的五（DRM）的\| 25A条口（T）的有效值\|20 可控硅\| 200伏五（DRM）的\| 10A条口（T）的有效值\|20 TRIAC\|300V V(DRM)\|6A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|25A I(T)RMS\|TO-39 TRIAC\|600V V(DRM)\|8A I(T)RMS\|TO-202 TRIAC\|500V V(DRM)\|8A I(T)RMS\|TO-202 TRIAC\|200V V(DRM)\|3A I(T)RMS\|TO-202 TRIAC\|500V V(DRM)\|25A I(T)RMS\|TO-220 TRIAC\|200V V(DRM)\|8A I(T)RMS\|TO-202 TRIAC\|600V V(DRM)\|3A I(T)RMS\|TO-220 TRIAC\|400V V(DRM)\|8A I(T)RMS\|TO-202 TRIAC\|800V V(DRM)\|16A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|25A I(T)RMS\|PRESS-13 TRIAC\|500V V(DRM)\|15A I(T)RMS\|TO-3 TRIAC\|500V V(DRM)\|40A I(T)RMS\|TO-218VAR TRIAC\|200V V(DRM)\|10A I(T)RMS\|TO-203AA TRIAC\|200V V(DRM)\|15A I(T)RMS\|TO-208AA TRIAC\|400V V(DRM)\|10A I(T)RMS\|TO-203AA TRIAC\|400V V(DRM)\|10A I(T)RMS\|FBASE-R-HW30 TRIAC\|600V V(DRM)\|10A I(T)RMS\|FBASE-R-HW30 TRIAC\|200V V(DRM)\|10A I(T)RMS\|FBASE-R-HW30 TRIAC\|200V V(DRM)\|10A I(T)RMS\|TO-208AA TRIAC\|600V V(DRM)\|10A I(T)RMS\|TO-203AA TRIAC\|200V V(DRM)\|20A I(T)RMS\|TO-220 TRIAC\|200V V(DRM)\|6A I(T)RMS\|TO-220 TRIAC\|500V V(DRM)\|25A I(T)RMS\|TO-218VAR TRIAC\|600V V(DRM)\|25A I(T)RMS\|TO-218VAR TRIAC\|400V V(DRM)\|25A I(T)RMS\|TO-218VAR TRIAC\|400V V(DRM)\|40A I(T)RMS\|TO-218VAR TRIAC\|200V V(DRM)\|40A I(T)RMS\|TO-218VAR TRIAC\|400V V(DRM)\|10A I(T)RMS\|TO-8 RF inductor, ceramic core, 5% tol, SMT, RoHS TRIAC\|400V V(DRM)\|25A I(T)RMS\|FBASE-R TRIAC\|600V V(DRM)\|25A I(T)RMS\|FBASE-R TRIAC\|500V V(DRM)\|25A I(T)RMS\|FBASE-R TRIAC\|200V V(DRM)\|25A I(T)RMS\|FBASE-R TRIAC\|600V V(DRM)\|25A I(T)RMS\|TO-220 TRIAC\|400V V(DRM)\|25A I(T)RMS\|TO-220 TRIAC\|400V V(DRM)\|15A I(T)RMS\|TO-220 TRIAC\|200V V(DRM)\|15A I(T)RMS\|TO-220 TRIAC\|500V V(DRM)\|8A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|25A I(T)RMS\|TO-208AA TRIAC\|400V V(DRM)\|40A I(T)RMS\|TO-208AA TRIAC\|400V V(DRM)\|40A I(T)RMS\|IST-3RT-1/4 TRIAC\|500V V(DRM)\|12A I(T)RMS\|TO-220 TRIAC\|200V V(DRM)\|12A I(T)RMS\|TO-220AB TRIAC\|400V V(DRM)\|6A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|6A I(T)RMS\|TO-220 TRIAC\|700V V(DRM)\|40A I(T)RMS\|TO-218 TRIAC\|200V V(DRM)\|4A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|16A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|5A I(T)RMS\|TO-220 TRIAC\|200V V(DRM)\|10A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|10A I(T)RMS\|TO-220 TRIAC\|600VV(DRM)\|8AI(T)RMS\|TO-220 TRIAC\|600VV(DRM)\|25AI(T)RMS\|FBASE-R TRIAC\|600VV(DRM)\|25AI(T)RMS\|CAN TRIAC\|600VV(DRM)\|25AI(T)RMS\|TO-39 TRIAC\|800VV(DRM)\|25AI(T)RMS\|TO-220AB THYRISTORMODULE\|TRIAC TRIAC\|600VV(DRM)\|25AI(T)RMS\|TO-220AB TRIAC\|600VV(DRM)\|25AI(T)RMS\|TO-220 TRIAC\|600VV(DRM)\|25AI(T)RMS\|TO-218 TRIAC\|600VV(DRM)\|25AI(T)RMS\|TO-218VAR TRIAC\|600VV(DRM)\|25AI(T)RMS\|PRESS-13 TRIAC\|200V V(DRM)\|25A I(T)RMS\|TO-220	Samsung Semiconductor Co., Ltd. Vishay Intertechnology, Inc. STMicroelectronics N.V. Xicon Passive Components Anpec Electronics, Corp. Littelfuse, Inc. International Rectifier, Corp. Motorola Mobility Holdings, Inc. Electronic Theatre Controls, Inc. Mitsubishi Electric, Corp. Jiangsu Changjiang Electronics Technology Co., Ltd. GTM, Corp.
MG360V1US41 E002277	Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Current, It av:12A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) From old datasheet system	Toshiba Corporation Toshiba Semiconductor
BCR12PM-14LJB00 BCR12PM-14LJA8B00	700V - 12A - Triac Medium Power Use	Renesas Electronics Corporation
BCR12LM-12LDB00 BCR12LM-12LD-15	600V - 12A - Triac Medium Power Use	Renesas Electronics Corporation
BTA212BSERIES BTA212_SERIES_B_1 BTA212-500B BTA212	Three quadrant triacs high commutation - I<sub>GT</sub>: 50 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 800 V; Package: SOT78 (TO-220AB); Container: Tube pack TRIAC\|500V V(DRM)\|12A I(T)RMS\|TO-220AB From old datasheet system	NXP SEMICONDUCTORS Philips
TW5N04FZ TW5N04FZ3 TW5N04FZ1 TW7N04FZ2 TW7N08FZ2 T	TRIAC\|400V V(DRM)\|5A I(T)RMS\|TO-220 TRIAC\|400V V(DRM)\|8A I(T)RMS\|TO-220 可控硅\| 400V五（DRM）的\| 8A条口（T）的有效值\|20 TRIAC\|800V V(DRM)\|8A I(T)RMS\|TO-220 可控硅\| 800V的五（DRM）的\| 8A条口（T）的有效值\|20 TRIAC\|800V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 800V的五（DRM）的\| 12A条口（T）的有效值\|20 TRIAC\|500V V(DRM)\|25A I(T)RMS\|TO-103VARM6 可控硅\| 500V五（DRM）的\| 25A条口（T）的有效值\|03VARM6	DB Lectro, Inc. Intersil, Corp.
BT138-600 BT138	600V Vdrm 12A Triac, 1.65V Peak On-State Voltage, 2.0mA Repetitive Peak Off-State Current Bi-Directional Triode Thyristor	SemiWell Semiconductor
IR3476MTR1PBF IR3476MTRPBF IR347613 2R5TPE330M9 C1	12A Highly Integrated SupIRBuck Continuous 12A Load Capability Compensation Loop not Required	International Rectifier
BTA208X-800B BTA208X-800B11	3Q Hi-Com Triac High voltage capability 3Q Hi-Com Triac BTA208X-800B<SOT186A (SOT186A)\|<<http://www.nxp.com/packages/SOT186A.html<1<week 32, 2004,;	http:// NXP Semiconductors N.V.

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