PART |
Description |
Maker |
MX26C4000BTI-90 MX26C4000BQI-15 MX26C4000BQI-10 MX |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PDSO32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PQCC32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PQCC32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PDIP32 Switch Actuator; For Use With:18 Series Switches; Accessory Type:Spring Lever Actuator RoHS Compliant: Yes IC DRIVER 1/2BRDG LOW SIDE 16DIP DIODE SCHTTKY 150V 2X30A TO247AD
|
Macronix International Co., Ltd.
|
IS61LV5128-10 IS61LV5128-10B IS61LV5128-10BI IS61L |
IC,SRAM,512KX8,CMOS,TSOP,44PIN,PLASTIC 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO44 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PBGA36 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PBGA36 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
|
ISSI[Integrated Silicon Solution, Inc] ISSI [Integrated Silicon Solution, Inc] ISSI[Integrated Silicon Solution Inc] Integrated Silicon Solution Inc Integrated Silicon Solution, Inc.
|
MB811171622A-125 |
CMOS 2×512K×16 Bit
Synchronous Dynamic RAM(CMOS 2×512K×16 位同步动态RAM)
|
Fujitsu Limited
|
IS62WV51216BLL-55BLI IS62WV51216ALL-70XI IS62WV512 |
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 12k × 16低电压,超低功耗的CMOS静态RAM 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 55 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
MX29LV040CTC-55R MX29LV040CTI-55R |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd.
|
27C8100-12 |
8M-BIT [1M x8/512K x16] CMOS OTP ROM 800万位[100万x8/512K x16]检察官办公室的CMOS光盘
|
Macronix International Co., Ltd.
|
KM68U4000C |
512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低电压CMOS 静RAM) 12k x8位低功耗和低电压的CMOS静态RAM(为512k x8位低功耗低电压的CMOS静态RAM)的
|
Samsung Semiconductor Co., Ltd.
|
AS29LV800T-90TI AS29LV800 AS29LV800B-120SC AS29LV8 |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 120ns access time 3V 1M】8/512K】16 CMOS Flash EEPROM 3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time
|
ANADIGICS[ANADIGICS, Inc] Alliance Semiconductor
|
AS7C4096 AS7C34096-15JC AS7C34096-10JC AS7C34096-1 |
5V/3.3V 512K X8 CMOS SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO36 High Speed CMOS Logic Dual Retriggerable Monostable Multivibrators with Reset 16-TSSOP -55 to 125 512K X 8 STANDARD SRAM, 20 ns, PDSO44 High Speed CMOS Logic Dual Retriggerable Monostable Multivibrators with Reset 16-TSSOP -55 to 125 512K X 8 STANDARD SRAM, 20 ns, PDSO36 Dual 4-Input Positive-AND Gate 14-TVSOP -40 to 85 512K X 8 STANDARD SRAM, 12 ns, PDSO44 Dual 4-Input Positive-AND Gate 14-SOIC -40 to 85 512K X 8 STANDARD SRAM, 12 ns, PDSO36 TV 12C 8#20 4#16 SKT PLUG 512K X 8 STANDARD SRAM, 10 ns, PDSO36 Dual 4-Input Positive-AND Gate 14-TSSOP -40 to 85 512K X 8 STANDARD SRAM, 20 ns, PDSO44 DUAL MONOSTABLE MULTIVIBRATORS 16-SOIC -40 to 85 512K X 8 STANDARD SRAM, 20 ns, PDSO44 Dual 4-Input Positive-AND Gate 14-SO -40 to 85 512K X 8 STANDARD SRAM, 15 ns, PDSO36 Dual 4-Input Positive-AND Gate 14-TSSOP -40 to 85 512K X 8 STANDARD SRAM, 15 ns, PDSO44 TV 26C 26#20 PIN WALL RECP 512K X 8 STANDARD SRAM, 10 ns, PDSO44 TV 5C 5#16 PIN WALL RECP SRAM - 5V Fast Asynchronous
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
S29CL016J0JDGH014 S29CL016J0JDGH037 S29CL016J0MDGH |
16 Megabit (512k x 32-Bit) CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 3.3V PROM, 54 ns, UUC74
|
Spansion, Inc. SPANSION LLC
|
W29C040T-12 W29C040T-90B W29C040T-12B W29C040P-12 |
512K X 8 CMOS FLASH MEMORY 512K X 8 FLASH 5V PROM, 120 ns, PQCC32
|
Winbond Electronics, Corp.
|