PART |
Description |
Maker |
1N1202C S2580 S25160 1N1199C 1N1203C 1N1204C 1N120 |
Standard Rectifier (trr more than 500ns) SILICON POWER RECTIFIER CONN L/FORK INSUL 12-10 AWG #6
|
MICROSEMI[Microsemi Corporation]
|
FS30KMH-2 |
Power MOSFETs: FS Series, Low Voltage, 100V for High-Speed Switching Use Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation Powerex Power Semiconductors
|
2SK1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
|
TOSHIBA[Toshiba Semiconductor]
|
2SK2723 2SK2723JM |
Nch power MOSFET MP-45F high-speed switching SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
HAT2215R HAT2215R-EL-E HAT2215RJ HAT2215RJ-EL-E |
Transistors>Switching/MOSFETs Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SJ550 2SJ550L 2SJ550S |
Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor] http://
|
GT15Q301 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体
|
http:// TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
MP4403 E002514 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING From old datasheet system
|
Toshiba
|
Z7.283.2227.0 Z7.255.1027.0 Z7.211.0027.0 Z7.211.0 |
INSUL. JUMPER BAR IVBWKN10 - 2 INTERCONNECTION DEVICE
|
Wieland Electric, Inc. WIELAND ELECTRIC INC
|
MP4514 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA[Toshiba Semiconductor]
|