PART |
Description |
Maker |
OC70 OC75 OC66 2N217 OC74 OC65 OC73 OC76 OC77 OC78 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 10MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 150MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 300MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 300MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 250MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-5 TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-5 68HC11/Bidirectional-Compatible µP Reset Circuit TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 18V的五(巴西)总裁| 500mA的一(c)|
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APEM SA
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2SA1585S 2SB1424 A5800357 2SB1424Q 2SA1585SR |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SPAK 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) Transistors > Small Signal Bipolar Transistors(up to 0.6W) Low Vce(sat) Transistor (-20V, -3A) From old datasheet system Low VCE(sat) Transistor(低VCE(sat)晶体 Low Vce(sat) Transistor (-20V/ -3A)
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ROHM[Rohm] Rohm CO.,LTD.
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2SD2114K 2SD2144S A5800324 2SD2114KW 2SD2144SU 2SD |
High-current Gain MediumPower Transistor (20V/ 0.5A) High-current Gain MediumPower Transistor (20V, 0.5A) High-current Gain Medium Power Transistor (20V,0.5A) From old datasheet system
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Rohm CO.,LTD. ROHM[Rohm]
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IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A? Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?) Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A) CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条? TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
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IRF[International Rectifier] International Rectifier, Corp.
|
2SD2144S 2SD2114K 2SD2114K_1 2SD2144STPV 2SD2114KS |
High-current Gain Medium Power Transistor (20V, 0.5A) 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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ROHM[Rohm]
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2SC4295M 2SC4295MN 2SC4295MP 2SC4295MQ 2SD2279P 2S |
TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 200MA I(C) | SIP 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SC-71 晶体管|晶体管|叩| 50V五(巴西)总裁| 200mA的一(c)|律师- 71 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SIP 晶体管|晶体管|叩| 50V五(巴西)总裁| 200mA的一(c)|园区 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | SIP 晶体管|晶体管|进步党| 50V五(巴西)总裁| 5A条一(c)|园区 晶体管|晶体管|进步党| 50V五(巴西)总裁| 150毫安一(c)|园区 晶体管|晶体管|叩| 50V五(巴西)总裁| 5A条一(c)|律师- 71 5个引#181;带看门狗和手动复位的P监控电路 晶体管|晶体管|叩| 25V的五(巴西)总裁| 50mA的一(c)|园区 晶体管|晶体管|叩| 20V的五(巴西)总裁| 1A条一(c)|律师- 71 晶体管|晶体管|叩| 400V五(巴西)总裁| 100mA的一(c)|律师- 71 晶体管|晶体管|叩| 25V的五(巴西)总裁| 200mA的一(c)|律师- 71 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SIP TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 3A I(C) | SIP TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | SC-71 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | SIP TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SIP TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | SIP 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SC-71 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | SIP TRANSISTOR|BJT|NPN|400VV(BR)CEO|100MAI(C)|SC-71
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Power Integrations, Inc.
|
AF2301P AF2301PW AF2301PWA AF2301PWLA AF2301PWL |
V(ds): -20V; V(gs): -8V; -2.3A; 20V P-channel enchancement mode MOSFET 20V P-Channel Enhancement Mode MOSFET Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41 RoHS Compliant: No MS27467T21B41S
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Anachip Corp ETC
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TPC8207 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,6A I(D),SO
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Toshiba Semiconductor
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2SB1412 2SB1326 2SB1386 |
Low Frequency Transistor(-20V,-5A)
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ROHM[Rohm]
|
CDBF0320-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=20V, V-R=20V, I-O=0.35A
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Comchip Technology
|