PART |
Description |
Maker |
HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM 256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存)
|
SIEMENS AG
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ATMEGA2560 ATMEGA1280 ATMEGA1281 ATMEGA640 ATMEGA2 |
(ATMEGA xxx) 8-BIT Microcontroller with 256K Bytes In-System Programmable Flash 8- BIT Microcontroller with 256K Bytes In-System Programmable Flash
|
ATMEL[ATMEL Corporation]
|
LH532600 LH532600N LH532600D LH532600T LH532600TR |
CMOS 2M(256K X 8/128K X 16) Mask-Programmable ROM CMOS 2M (256K x 8/128K x 16) MROM
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SHARP[Sharp Electrionic Components] Sharp Corporation
|
ATMEGA2560 ATMEGA2560V ATMEGA2561 A000063 A000067 |
8-bit Atmel Microcontroller with 64K/128K/256K Bytes In-System Programmable Flash
|
ATMEL Corporation
|
GS74116A GS74116ATP-10 GS74116AJ-12I GS74116AJ-12I |
256K X 16 STANDARD SRAM, 7 ns, PDSO44 256K x 16 4Mb Asynchronous SRAM 256K × 16 4Mb的异步SRAM RES, MTF 20K 1/4W 2% ER 16C 16#16 SKT PLUG ER 13C 3#8 3#12 7#16 SKT PLUG 10ns 256K X 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 7 ns, PBGA48
|
SRAM Electronic Theatre Controls, Inc. GSI[GSI Technology] N.A. ETC
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28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
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AS7C33256PFS18A-166TQI AS7C33256PFS16A AS7C33256PF |
3.3V 256K x 16/18 pipeline burst synchronous SRAM 3.3V 256K×18 Ppipeline Burst Synchronous SRAM(3.3V 256K×18流水线脉冲同步静态RAM) 3.3 256K × 18 Ppipeline突发同步SRAM的电压(3.3V 256K × 18流水线脉冲同步静态内存) 3.3V 256K 】 16/18 pipeline burst synchronous SRAM 3.3V 256K x 16 pipeline burst synchronous SRAM, clock speed - 133MHz 3.3V 256K × 16/18 pipeline burst synchronous SRAM
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Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor ...
|
A29002V-100 A29002-70 A29002L-70 A29002V-70 A29002 |
110ns 20mA 256K x 8bit CMOS 5.0V-only 70ns 20mA 256K x 8bit CMOS 5.0V-only 100ns 20mA 256K x 8bit CMOS 5.0V-only 120ns 20mA 256K x 8bit CMOS 5.0V-only 150ns 20mA 256K x 8bit CMOS 5.0V-only 90ns 20mA 256K x 8bit CMOS 5.0V-only 55ns 20mA 256K x 8bit CMOS 5.0V-only
|
AMIC Technology
|
SST27VF020-90-3C-PHE SST27VF010 SST27VF010-70-3C-N |
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 256K X 8 FLASH 12V PROM, 70 ns, PQCC32 -bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 256K X 8 FLASH 12V PROM, 70 ns, PDSO32 -bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 128K X 8 FLASH 12V PROM, 70 ns, PDSO32 -bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 -bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 128K X 8 FLASH 12V PROM, 90 ns, PDIP32 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
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SILICON STORAGE TECHNOLOGY INC Silicon Storage Technology, Inc. SST[Silicon Storage Technology, Inc]
|
M27C2001-70B6TR M27C2001-12B1 M27C2001-12N6TR M27C |
256K X 8 OTPROM, 70 ns, PDIP32 256K X 8 OTPROM, 120 ns, PDIP32 256K X 8 OTPROM, 120 ns, PDSO32 256K X 8 OTPROM, 80 ns, PDIP32 256K X 8 UVPROM, 80 ns, CDIP32 256K X 8 OTPROM, 120 ns, PQCC32
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STMICROELECTRONICS
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M27C400206 M27C4002-90XN6TR M27C4002 M27C4002-10B1 |
4 Mbit (256Kb x16) UV EPROM and OTP EPROM 256K X 16 UVPROM, 70 ns, CDIP40 256K X 16 OTPROM, 150 ns, PQCC44 256K X 16 OTPROM, 200 ns, PDIP40 256K X 16 UVPROM, 150 ns, CDIP40 256K X 16 OTPROM, 120 ns, PQCC44
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STMICROELECTRONICS[STMicroelectronics]
|
M68AW256ML70ZB6 M68AW256ML55ND1 M68AW256ML55ND1E M |
4 Mbit (256K x16) 3.0V Asynchronous SRAM 4兆位56K × 16.0V异步SRAM 256K X 16 STANDARD SRAM, 55 ns, PDSO44 256K X 16 STANDARD SRAM, 70 ns, PBGA48
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
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