| PART |
Description |
Maker |
| OC70 OC75 OC66 2N217 OC74 OC65 OC73 OC76 OC77 OC78 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 10MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 150MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 300MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 300MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 250MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-5
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-5
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 18V的五（巴西）总裁| 500mA的一（c）|
|
APEM SA
|
| BB1 BB1A4A BB1A4M BB1L3N BB1A3M BB1F3P BB1J3P BB1L |
COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
Hybrid transistor
|
NEC Corp.
NEC[NEC]
|
| BCV62B BCV62C BCV62 BCV62A BCV62B/T1 |
TRANSISTOR SOT-23 晶体管的SOT - 23
PNP general purpose double transistor
TRANSISTOR|BJT|ARRAY|BLDGBLOCK|30VV(BR)CEO|100MAI(C)|SOT-143
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| CP705 |
Chip Form: SILICON TRANSISTOR
Small Signal Transistor PNP - High Current Transistor Chip
|
Central Semiconductor Corp
|
| FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五（巴西）总裁| 400mA的一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC
Fujitsu, Ltd.
Bourns, Inc.
Amphenol, Corp.
|
| GA1F4Z GA1F4ZL65 GA1F4ZL64 GA1F4Z-T2 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323 晶体管| 50V五（巴西）总裁| 100mA的一（c）|的SOT - 323
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| FN1L4Z FN1L4Z-L FN1L4Z-T2B FN1L4ZM62 |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-346 晶体管| 50V五（巴西）总裁| 100mA的一（c）|的SOT - 346
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD
Compound transistor
|
NEC, Corp.
NEC[NEC]
|
| IPB80N04S2-04 IPI80N04S2-04 SP0002-18154 SP0002-19 |
80 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN
OptiMOS? Power-Transistor
OptiMOS㈢ Power-Transistor
OptiMOSPower-Transistor
|
INFINEON[Infineon Technologies AG]
|
| 2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor
Bipolar Transistor Adoption of FBET, MBIT processes
Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| 2SA1460 2SA1460-AZ 2SA1460-L-AZ 2SA1460L 2SA1460K |
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1A I(C) | TO-221VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP SILICON TRANSISTOR
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
| CP617 |
Small Signal Transistor PNP - Silicon RF Transistor Chip
Chip Form: RF TRANSISTOR
|
Central Semiconductor Corp
|
| IRFP443R IRFF430R IRF731R IRF732R IRFP442R IRFP342 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 500MA I(D) | TO-250VAR
Rugged Series Power MOSFETs - N-Channel
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.75A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7.7A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8.7A I(D) | TO-247AC
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 10A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6.8A I(D) | TO-247 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 6.8AI（四）|47
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.4A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 5.4AI（四）|04AA
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 4A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.25A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 450V五（巴西）直| 2.25AI（四）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 1.35A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 1.35AI（四）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4A I(D) | TO-204AA
|
International Rectifier, Corp.
Intersil, Corp.
Infineon Technologies AG
Fairchild Semiconductor, Corp.
|
