| PART |
Description |
Maker |
| IXFN26N90 IXFN25N90 IXFN-26N90 IXFN-25N90 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs Single Die MOSFET
HiPerFET Power MOSFETs Single Die MOSFET 25 A, 900 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
|
http://
IXYS[IXYS Corporation]
IXYS, Corp.
|
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
| FS10VS-5 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 10 A, 250 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFETs: FS Series, Medium Voltage, 250V
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| IXFN230N1008 |
Power MOSFET Single Die MOSFET
|
IXYS Corporation
|
| OM6028SC OM6027SC OM6026SC OM6025SC OM6031SC OM603 |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
400V Single N-Channel Hi-Rel MOSFET in a D3 package
500V Single N-Channel Hi-Rel MOSFET in a TO-259AA package
1000V Single N-Channel Hi-Rel MOSFET in a TO-259AA package
400V Single N-Channel Hi-Rel MOSFET in a TO-259AA package
POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-258AA SIZE 6 DIE
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 22A I(D) | TO-259AA
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10A I(D) | TO-258AA
1000V, N-Channel, 10Amp MOSFET, High Energy Capability(1000V , 10A,N沟道，MOS场效应管（高能容量）)
400V, N-Channel, 24Amp MOSFET, High Energy Capability(400V , 24A,N沟道，MOS场效应管（高能容量）)
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 24A条（丁）|59AA
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 24A条（丁）|58AA
Isolated Hermetic Metal Package
|
International Rectifier
ETC
List of Unclassifed Manufacturers
Omnirel
Microsemi, Corp.
Wieland Electric, Inc.
|
| APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 MOSFET
|
Microsemi Corporation
|
| IRFC044 |
HEXFET? Power MOSFET Die in Wafer Form
|
International Rectifier
|
| IRFC240 |
HEXFET? Power MOSFET Die in Wafer Form
|
International Rectifier
|
| S2308 |
N-channel SiC power MOSFET bare die
|
Rohm
|
|
