| PART |
Description |
Maker |
| NDH8320C |
Dual N & P-Channel Enhancement Mode Field Effect Transistor(双N沟道和P沟道增强型场效应N沟道：漏电流3A, 漏源电压20V，导通电.06Ω；P沟道：漏电流-2A, 漏源电压-20V，导通电.13Ω 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Dual N & P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 102100-1 |
.156 Inch Centerline-Cable to Board AMPMODU .031 x .062 Interconnection System (Mod I); MOD I RECP PLTD 15 SEL ( AMP )
|
Tyco Electronics
|
| BL-BJ63V4V |
Dual N-Channel & Dual P-Channel Matched MOSFET Pair, Enhancement Mode, 14L SOIC
|
Bright LED Electronics Corp.
|
| BL-BG43V1 |
Dual N-Channel & Dual P-Channel Matched MOSFET Pair, Enhancement Mode, 14L PDIP
LED AlInGaN Green Low current requirement.
|
Bright LED Electronics Corp.
|
| LS4D18-270-RN LS4D18-3R3-RN LS4D18-560-RN LS4D18-2 |
Single N-Channel & P-Channel MOSFET Pair, Enhancement Mode, 8L PDIP 1 ELEMENT, 3.3 uH, GENERAL PURPOSE INDUCTOR, SMD
10.0mV Dual N-Channel Matched Pair MOSFET Array, Enhancement Mode, 8L CDIP 1 ELEMENT, 56 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 2.7 uH, GENERAL PURPOSE INDUCTOR, SMD
10.0mV Dual P-Channel Matched Pair MOSFET Array, Enhancement Mode, 8L CDIP 1 ELEMENT, 8.2 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel Programmable Matched Pair MOSFET Array, Enhancement Mode, 8L PDIP, EPAD Enabled 1 ELEMENT, 22 uH, GENERAL PURPOSE INDUCTOR, SMD
Single N-Channel & P-Channel MOSFET Pair, Enhancement Mode, 8L MSOP
Single N-Channel & P-Channel MOSFET Pair, Enhancement Mode, 8L SOIC
|
http://
ICE Components, Inc.
ICE COMPONENTS INC
|
| FDS8936S |
Dual N-Channel Enhancement Mode Field Effect Transistor 5 A, 30 V, 0.04 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| NTP27N06 NTB27N06 NTB27N06T4 |
Power MOSFET 27 Amps, 60 Volts N-Channel TO-220 and D2PAK
Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK
Power MOSFET 27 Amps / 60 Volts NChannel TO220 and D2PAK
LASER MOD 670NM .95MW MVP ROUND
LASER MOD 635NM 4.9MW VHK ROUND 27 A, 60 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|
| NTMSD3P303R2 |
FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package
P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package(双P通道，增强模式，SO-8封装的功率MOSFET与肖特基二极
|
ON Semiconductor
|
| DMN601DWK07 DMN601DWK-7 |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
3.3V, Full Duplex, 10Mbps, EIA RS-485 Transceiver 305 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes Incorporated
http://
Diodes, Inc.
|
| DMP2066LSD-13 |
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
5.8 A, 20 V, 0.04 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET GREEN, PLASTIC, SOP-8
|
Diodes Incorporated
Diodes, Inc.
|
| NTE2958 NTE2957 |
Dual Channel, 2/0, 25Mbps Digital Isolator 8-SOIC -40 to 125
MOSFET N-Channel, Enhancement Mode High Speed Switch
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
|
