| PART |
Description |
Maker |
| APT6025BVR |
POWER MOS V 600V 25A 0.250 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6025BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 600V 25A 0.250 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| SUD15P01-52 |
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
ZENER DIODES
P-Channel 8-V (D-S), 175 C MOSFET
P-Channel 8-V (D-S), 175C MOSFET
|
Vishay Siliconix
|
| 3404.2420.XX 3404.2417.XX 3404.2412.XX 3404.2413.X |
Surface Mount Fuse with Clip, 11.1 x 3.8 mm, Time-Lag T, UMZ 250 = UMT 250 (Au) UMC 250
|
Schurter Inc.
|
| SUU40N06-24 SUD40N06-24 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 37A I(D) | TO-251
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极
|
Vishay Intertechnology, Inc.
|
| APT10025JVFR |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT10025JLC |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
POWER MOS VI 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| ZVNL120G |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET
SOT223 N-CHANNEL ENHANCEMENT MODE
|
Zetex Semiconductors
Diodes Incorporated
|
| IXTH40N30NBSP IXTH40N30 IXTM40N30 |
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.088Ω的N沟道增强B>MegaMOSFET)
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.085Ω的N沟道增强B>MegaMOSFET)
From old datasheet system
N-Channel Enhancement MOSFET
|
IXYS Corporation
|
| STE36N50-DA |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics
ST Microelectronics
|
| 2SK2292-01L 2SK2292-01S |
N-channel MOS-FET 4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
|
