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Cypress
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| Part No. |
CYM9273PM-50C CYM9270PM-50C
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| OCR Text |
...271b/cym9272a d[0:31] dq[0:3] a[16:0] cs[0:1] bw[0:3] pd 1 pd 0 nc gnd d[0:15] dq[0:1] clk adsc a 16:0 sgw oe cs d[0:15] dq[0:1] clk oe[0:1]...512k x 36 nc nc
cym9270 cym9271b cym9272a cym9273 document #: 38-05135 rev. ** page 6 of 11 maxi... |
| Description |
64K/128K/256K/512k x 36 SRAM Module
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| File Size |
168.45K /
11 Page |
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Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
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| Part No. |
CY14B104L-BA15XCT CY14B104L-BA15XI
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| OCR Text |
16) nvsram cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document #: 001-07102 rev. *i r...512k x 8 (cy14b104l) or 256k x 16 (cy14b104n) hands off automatic store on power down with only ... |
| Description |
4 Mbit (512k x 8/256K x 16) nvSRAM 512k X 8 NON-VOLATILE SRAM, 15 ns, PBGA48
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| File Size |
501.55K /
23 Page |
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Maxwell Technologies, Inc
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| Part No. |
89LV1632RPQK-30
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| OCR Text |
16 megabit (512k x 32-bit) 89lv1632 ?2005 maxwell technologies. all rights reserved. low voltage mcm sram 08.18.05 rev 3 f eatures : ? four 512k x 8 sram die r ad -p ak ? technology hardens against natural space radia- tion technology to... |
| Description |
16 Megabit (512k x 32-Bit) Low Voltage MCM SRAM 512k X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68
16 Megabit (512k x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位）低压亿立方米的SRAM
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| File Size |
194.79K /
11 Page |
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Panasonic, Corp.
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| Part No. |
WED7F325ZXE5SJ-A
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| OCR Text |
...99 rev. eco# 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 9 8 7 6 5 ...512k x 8 8 dq 0-7 e 0 512k x 8 8 dq 8-15 e 1 512k x 8 8 dq 16-23 e 2 512k x 8 8 dq 24-31 e 3 a 0-18 ... |
| Description |
512kx32 5V Flash Module(512kx32 5V闪速存储器模块) 512kx32 5V的闪存模块（512kx32 5V的闪速存储器模块
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| File Size |
116.88K /
11 Page |
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it Online |
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Macronix International Co., Ltd.
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| Part No. |
27C4096-12 27C4096-10
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| OCR Text |
16 organization(mx27c4096, jedec pin out) ? 512k x 8 or 256k x 16 organization(mx27c4100, rom pin out compatible) ? +12.5v programming voltage ? fast access time: 100/120/150 ns ? totally static operation ? completely ttl compatible ?... |
| Description |
4M-BIT [512k x 8/256K x 16] CMOS EPROM 4分位[12k × 8/256K × 16]的CMOS存储
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| File Size |
791.22K /
18 Page |
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GSI Technology, Inc.
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| Part No. |
GS8160V18AT-250 GS8160V18AT-250I GS8160V18AT-350I GS8160V18AT-150 GS8160V32AT-150I GS8160V32AT-200I
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| OCR Text |
...8/32/36at is an 18,874,368-bit (16,777,216-bit for x32 version) high performa nce synchronous sram with a 2-bit burst address counter. alt...512k x 32 top view dq b nc dq b dq b dq b dq a dq a dq a dq a nc dq c dq c dq c dq d dq d dq d nc dq... |
| Description |
1M x 18, 512k x 32, 512k x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 5.5 ns, PQFP100
1M x 18, 512k x 32, 512k x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 4.5 ns, PQFP100
1M x 18, 512k x 32, 512k x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PQFP100
1M x 18, 512k x 32, 512k x 36 18Mb Sync Burst SRAMs 512k X 32 CACHE SRAM, 7.5 ns, PQFP100
1M x 18, 512k x 32, 512k x 36 18Mb Sync Burst SRAMs 512k X 32 CACHE SRAM, 6.5 ns, PQFP100
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| File Size |
491.24K /
24 Page |
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it Online |
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