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TOSHIBA
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Part No. |
TPN7R506NH
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OCR Text |
...: q sw = 9.2 nc (typ.) (3) low drain-source on-resistance: r ds(on) = 6.0 m ? (typ.) (v gs = 10 v) (4) low leakage current: i dss = 10 a (max) (v ds = 60 v) (5) enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 0.2 ma) 3.... |
Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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File Size |
237.68K /
9 Page |
View
it Online |
Download Datasheet
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TOSHIBA
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Part No. |
TPC6130
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OCR Text |
... small and thin package (2) low drain-source on-resistance: r ds(on) = 86 m ? (typ.) (v gs = -4.5 v) (3) low leakage current: i dss = -10 a (max) (v ds = -20 v) (4) enhancement mode: v th = -0.5 to -1.2 v (v ds = -10 v, i d = -0.2... |
Description |
Power MOSFET (P-ch single)
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File Size |
221.81K /
9 Page |
View
it Online |
Download Datasheet
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Price and Availability
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