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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM5364005BSW
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| OCR Text |
...s 8 write command set-up time t wcs 0 0 ns 7 write command hold time t wch 10 10 ns write command pulse width t wp 10 10 ns write command to ras lead time t rwl 13 15 ns write command to cas lead time t cwl 8 10 ns data set-up time ... |
| Description |
4M x 36 DRAM SIMM(4M x 36 动RAM模块) 4米36的DRAM上海药物研究所米36动态内存模块）
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| File Size |
375.73K /
19 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM53616004CK
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| OCR Text |
...s 8 write command set-up time t wcs 0 0 ns 7 write command hold time t wch 10 10 ns write command pulse width t wp 10 10 ns write command to ras lead time t rwl 13 15 ns write command to cas lead time t cwl 8 10 ns data set-up time ... |
| Description |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V 1,600 × 36的DRAM上海药物研究所利用16Mx4
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| File Size |
448.31K /
21 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM53616000CK
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| OCR Text |
... ms write command set-up time t wcs 0 0 ns 7 cas setup time( cas -before- ras refresh) t csr 5 5 ns cas hold time( cas -before- ras refresh) t chr 10 10 ns ras to cas precharge time t rpc 5 5 ns access time from cas precharge... |
| Description |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V 1,600 × 36的DRAM上海药物研究所利用16Mx4
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| File Size |
401.03K /
20 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM372V3200CS1
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| OCR Text |
... ms write command set-up time t wcs 0 0 ns 7 cas to w delay time t cwd 36 40 ns 7 column address to w delay time t awd 48 55 ns 7 cas prechange to w delay time t cpwd 53 60 ns 7 ras ro w delay time t rwd 71 83 ns 7,11 ac characte... |
| Description |
RES400,5.11K,1%,1/4W 32M × 72配置的DRAM内存的ECC的使6Mx4KK的刷新，3.3
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| File Size |
458.09K /
18 Page |
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it Online |
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Hynix Semiconductor, Inc.
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| Part No. |
GM71V18163CJ-6E
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| OCR Text |
...ve) d: h or l 2. t wcs >= 0ns early write cycle t wcs <= 0ns delayed write cycle 3. mode is determined by the or function of the /ucas and /lcas. (mode is set by earliest of /ucas... |
| Description |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
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| File Size |
91.14K /
11 Page |
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it Online |
Download Datasheet |
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http://
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| Part No. |
KMM372V413CK
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| OCR Text |
... ms write command set-up time t wcs 0 0 ns 7 cas to w dealy time t cwd 36 40 ns 7 column address to w delay time t awd 48 55 ns 7 cas precharge to w delay time t cpwd 53 60 ns 7
dram module kmm372v413ck/cs test condition : v ih ... |
| Description |
4M x 72 DRAM DIMM with ECC using 2Mx8, Dual Bank 2K Refresh, 3.3V
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| File Size |
411.45K /
19 Page |
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it Online |
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