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IXYS
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Part No. |
IXFE180N10
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OCR Text |
...W C C C C V~ V~
*Conforms to sot-227b outline *Encapsulating epoxy meets *Low RDS (on) HDMOSTM process *Rugged polysilicon gate cell structure *Unclamped Inductive Switching (UIS)
rated *Low package inductance UL 94 V-0, flammability cl... |
Description |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET-TM Power MOSFET
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File Size |
70.21K /
2 Page |
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it Online |
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IXYS
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Part No. |
IXFE80N50
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OCR Text |
... ? ? ? ? features ? conforms to sot-227b outline ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-d... |
Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
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File Size |
100.23K /
2 Page |
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it Online |
Download Datasheet
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IXYS, Corp.
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Part No. |
IXGN400N60A3
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OCR Text |
... 400a v ce(sat) 1.25v sot-227b, minibloc g = gate, c = collector, e = emitter |
Description |
400 A, 600 V, N-CHANNEL IGBT MINIBLOC-4
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File Size |
198.52K /
5 Page |
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it Online |
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Price and Availability
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