....0
1.0 2.40.2 2.00.2 3.50.1
s Features
q
1.5
1.5 R0.9 R0.9
q
0.85
0.550.1
0.450.05
1.250.05
s Absolute Maximum Ra...C C
EIAJ:sC-71 M Type Mold Package
Internal Connection
C B
200
E
s Electrical Charac...
Description
silicon NPN epitaxial planer type darlington(For low-frequency amplification) 500 mA, 50 V, NPN, si, sMALL sIGNAL TRANsIsTOR
... -5 IB1 (mA) 7 IB2 (mA) -7 ton (s) 0.5typ tstg (s) 10.0typ tf (s) 1.1typ
5.450.1 1.5
0.65 +0.2 -0.1
3.35
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
Collector-Emitter saturat...
Description
silicon NPN Triple Diffused Planar Transistor(Audio, series Regulator and General Purpose)
...censes of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third pa...
...censes of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third pa...
... -- 1.0 1.2 -- -- -- -- V V MHz s s s VCE = 4 V, IC = 0.5 A VCC = 10.5 V I C = 10 IB1 = -10 IB2 = 0.5 A Unit V V V A Test conditions I C = 10 A, IE = 0 I C = 50 mA, RBE = I E = 10 A, IC = 0 VCB = 50 V, IE = 0 VCE = 4 V, IC = 1 A (Pulse tes...
... 1 750 150 -55 ~ +150 Unit V
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2sD592 2sD592A 2sD592 VCBO VCEO...C C
2.540.15 123
2.30.2
1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:sC-43A
s Electrical ...
...
2.8 -0.3
+0.2
Unit: mm
s Features
q q q
0.650.15
+0.25 1.5 -0.05
0.650.15
High foward current transfer ratio hFE. Low ...C C
0.95
2.9 -0.05
1
1.90.2
+0.2
0.95
3 0.4 -0.05
+0.1
2
1.45
1.1 -0....
Description
silicon NPN epitaxial planer type
...2sB710 and 2sB710A
Unit: mm
s Features
q q
2.8 -0.3 0.650.15
+0.2
2.9 -0.05
1.90.2
+0.2
Low collector to emitter satu...C C
1:Base 2:Emitter 3:Collector
JEDEC:TO-236 EIAJ:sC-59 Mini Type Package
Marking symbol : W...
....0
1.0 2.40.2 2.00.2 3.50.1
s Features
q q q
1.5 R0.9 R0.9
0.85
0.550.1
0.450.05
1.250.05
s Absolute Maximum Ratings
P...C C
1:Base 2:Collector 3:Emitter
2.5 2.5 3 2 1
EIAJ:sC-71 M Type Mold Package
s Electrical C...
Description
silicon NPN epitaxial planer type small signal transistor
...50 Unit V
1.0
0.450.05 1
s Features
1.5
1.5 R0.9 R0.9
0.4
1.00.1
R
0. 7
s Absolute Maximum Ratings
Parameter Co...C C
1:Base 2:Collector 3:Emitter EIAJ:sC-71 M Type Mold Package
s Electrical Characteristics
Pa...
Description
silicon NPN epitaxial planer type(For medium-power general amplification)