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31015DE 48S12 C3216X7 MSM7512B PH868C12 DS1834 0J100 KBP304
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    Alpha & Omega Semiconductor
Part No. AOSD62666E
OCR Text ... i d =250 a output capacitance forward transconductance i s =1a, v gs =0v v ds =5v, i d =9.5a v gs =10v, i d =9.5a v ds =0v, v gs =20v maximum body-diode continuous current input capacitance gate-body leakage current turn-off delaytime v g...
Description Dual MV MOSFETs (40V - 400V)

File Size 382.76K  /  5 Page

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    Alpha & Omega Semiconductor
Part No. AOWF11N70
OCR Text ...a,v gs =0v v ds =40v, i d =5.5a forward transconductance turn-on rise time gate source charge gate drain charge diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss ...
Description Single HV MOSFETs (500V - 1000V)

File Size 309.98K  /  5 Page

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    Alpha & Omega Semiconductor
Part No. AOWF11N60
OCR Text ...a,v gs =0v v ds =40v, i d =5.5a forward transconductance diode forward voltage t d(off) 92 ns t f 42 ns t rr 400 500 600 ns q rr 4.7 5.9 7.1 c this product has been designed and qualified for th e consumer market. applications or uses as c...
Description Single HV MOSFETs (500V - 1000V)

File Size 304.31K  /  5 Page

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    Alpha & Omega Semiconductor
Part No. AOTF9N50
OCR Text ...ameters turn-on rise time diode forward voltageturn-off delaytime v gs =10v, v ds =250v, i d =9a, r g =25 gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =400v, i d =9a gate source chargegate...
Description Single HV MOSFETs (500V - 1000V)

File Size 282.35K  /  6 Page

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    2SB941 2SB941A 2SD1266A 2SB0941 2SD1266 2SB941APQ 2SB941PQ 2SB0941A

PANASONIC[Panasonic Semiconductor]
PANASONIC CORP
Part No. 2SB941 2SB941A 2SD1266A 2SB0941 2SD1266 2SB941APQ 2SB941PQ 2SB0941A
OCR Text ... V A A W C C 16.70.3 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 1:Base 2:Co...
Description Silicon PNP epitaxial planar type power transistor
Silicon PNP epitaxial planar type(For low-frequency power amplification)
3 A, 80 V, PNP, Si, POWER TRANSISTOR
3 A, 60 V, PNP, Si, POWER TRANSISTOR

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    2SB942 2SD1267A 2SD1267

PANASONIC[Panasonic Semiconductor]
Part No. 2SB942 2SD1267A 2SD1267
OCR Text ... V A A W C C 16.70.3 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 1:Base 2:Co...
Description Silicon PNP epitaxial planar type(For low-frequency power amplification)

File Size 45.73K  /  2 Page

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    Alpha & Omega Semiconductor
Part No. AOTF11N60
OCR Text ...a,v gs =0v v ds =40v, i d =5.5a forward transconductance diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v ds =5v i d =250 a v ds =480v, t j =125c breakdown volta...
Description Single HV MOSFETs (500V - 1000V)

File Size 352.46K  /  6 Page

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    Alpha & Omega Semiconductor
Part No. AOK5N100
OCR Text ...a,v gs =0v v ds =40v, i d =2.5a forward transconductance turn-on rise time gate source charge gate drain charge diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss ...
Description Single HV MOSFETs (500V - 1000V)

File Size 298.78K  /  5 Page

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    Alpha & Omega Semiconductor
Part No. AOD9N50 AOI9N50
OCR Text ...a,v gs =0v v ds =40v, i d =4.5a forward transconductance dynamic parameters diode forward voltage gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =400v, i d =9a gate source charge maximum body-diode pulsed curre...
Description Single HV MOSFETs (500V - 1000V)

File Size 349.60K  /  6 Page

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    SGS Thomson Microelectronics
Part No. STY34NB50F
OCR Text ...s min. typ. max. unit g fs ( * )forward transconductance v ds >i d(o n) xr ds(on )ma x i d =17a 27 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs =0 5.9 880 80 nf pf pf sty34nb50f...
Description N - CHANNEL 500V - 0.11Ohm - 34 A - Max247 PowerMESH MOSFET

File Size 87.37K  /  8 Page

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