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Sanyo
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Part No. |
2SC4520
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OCR Text |
...ations
Features
* Adoption of fbet, MBIT process. * Large current capacity. * Low collector-to-emitter saturation voltage. * Fast switching speed. * Small-sized package.
Package Dimensions
unit:mm 2038A
[2SC4520]
4.5 1.6 1.5
0.4 ... |
Description |
NPN Epitaxial Planar Silicon Transistors
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File Size |
92.02K /
4 Page |
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Sanyo Electric Co., Ltd. Sanyo Electric Co.,Ltd.
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Part No. |
2SC4824 2SA1850 0168
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OCR Text |
...824]
Features
* Adoption of fbet process. * High Gain Bandwidth product (fT=400MHz). * High breakdown voltage (VCEO=120V). * Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.7pF/NPN, 2.2pF/PNP. * Us... |
Description |
NPN Epitaxial Planar Silicon Transistor for High Definition CRT Display Video Output Applications(用于高分辨率CRT显示视频输出应用的NPN硅外延平面型晶体 瑞展硅晶体管高清晰度CRT显示器视频输出应用(用于高分辨率CRT显示器显示视频输出应用的npn型硅外延平面型晶体管 PNP/NPN Epitaxial Planar Silicon Transistors From old datasheet system PNP Epitaxial Planar Silicon Transistor High Definition CRT Display Video Output Applications NPN Epitaxial Planar Silicon Transistor High Definition CRT Display Video Output Applications
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File Size |
139.51K /
4 Page |
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Sanyo
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Part No. |
2SC4827 2SA1853 0170
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OCR Text |
...827]
Features
* Adoption of fbet process. * High fT : fT=300MHz. * High breakdown voltage : VCEO=200V. * Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.2pF/NPN, 2.7pF/PNP. * Possible to offer the ... |
Description |
NPN Epitaxial Planar Silicon Transistor High Definition CRT Display Video Output Applications PNP Epitaxial Planar Silicon Transistor High Definition CRT Display Video Output Applications From old datasheet system PNP/NPN Epitaxial Planar Silicon Transistors
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File Size |
108.36K /
4 Page |
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it Online |
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Sanyo
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Part No. |
2SK2218 1025
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OCR Text |
...ations
Features
* Adoption of fbet process. * Amateur radio equipment. * UHF amplifiers, MIX, OSC, analog switches. * Large | yfs |. * Small Ciss.
Package Dimensions
unit:mm 2125
[2SK2218]
4.5 1.6 1.5
0.5
3
1.5
2
3.0
... |
Description |
High-Frequency Low-Noise Amplifier Applications From old datasheet system N-Channel Junction Silicon FET
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File Size |
212.16K /
6 Page |
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Sanyo Electric Co., Ltd.
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Part No. |
2SK2219 1026 2SK2219-21 2SK2219-23
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OCR Text |
...t characteristic. * Adoption of fbet process.
Package Dimensions
unit:mm 2058A
[2SK2219]
0.425
0.3 3
0.15
2.1 1.250
0 to 0.1
0.425
1 2 0.65 0.65 2.0
0.3 0.9
0.6
0.2
Specifications
Absolute Maximum Ratings ... |
Description |
1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET N-Channel Junction FET for Capacitor Microphone Applications(应用于电容器话筒的N沟道结型场效应管) N沟道场效应晶体管的结电容麦克风应用(应用于电容器话筒沟道结型场效应管 From old datasheet system N-Channel Junction Silicon FET
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File Size |
133.01K /
4 Page |
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Sanyo
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Part No. |
2SA1682 0113
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OCR Text |
...ratio : 1.0 typ). * Adoption of fbet process.
C : Collector B : Base E : Emitter
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector ... |
Description |
PNP Epitaxial Planar Silicon Transistor TV Camera Deflection, High-Voltage Driver Applications From old datasheet system
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File Size |
69.51K /
3 Page |
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Sanyo
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Part No. |
2SC4027 0103
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OCR Text |
...
1.5
Features
* Adoption of fbet, MBIT processes. * High voltage and large current capacity. * Fast switching time. * Small and slim package permitting 2SA1522/ 2SC4027-applied sets to be made more compact.
2.3
0.5
0.85 0.7
0.... |
Description |
PNP/NPN Epitaxial Planar Silicon Transistors From old datasheet system
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File Size |
56.74K /
5 Page |
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Sanyo
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Part No. |
2SK771 1097
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OCR Text |
...
0.5
Features
* Adoption of fbet process. * Ultrasmall-sized package permitting sets to be made smaller and slimmer.
0.4 3
0.16
0 to 0.1
1.5 0.5 2.5
1
0.95 0.95 2 1.9 2.9
Specifications
Absolute Maximum Ratings at Ta... |
Description |
N-Channel Junction Silicon FET From old datasheet system
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File Size |
78.22K /
3 Page |
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Sanyo
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Part No. |
2SA1434 0071
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OCR Text |
... smaller, slimer. * Adoption of fbet process. * High DC current gain (hFE=500 to 1200). * Low collector-to-emitter saturation voltage (VCE(sat)0.5V). * High VEBO (VEBO15V).
1 : Emitter 2 : Collector 3 : Base
Specifications
Absolute M... |
Description |
PNP Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amp Applications From old datasheet system
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File Size |
74.86K /
3 Page |
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Price and Availability
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