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  fbet Datasheet PDF File

For fbet Found Datasheets File :: 490    Search Time::3.281ms    
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    Sanyo
Part No. 2SC4520
OCR Text ...ations Features * Adoption of fbet, MBIT process. * Large current capacity. * Low collector-to-emitter saturation voltage. * Fast switching speed. * Small-sized package. Package Dimensions unit:mm 2038A [2SC4520] 4.5 1.6 1.5 0.4 ...
Description NPN Epitaxial Planar Silicon Transistors

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    Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
Part No. 2SC4824 2SA1850 0168
OCR Text ...824] Features * Adoption of fbet process. * High Gain Bandwidth product (fT=400MHz). * High breakdown voltage (VCEO=120V). * Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.7pF/NPN, 2.2pF/PNP. * Us...
Description NPN Epitaxial Planar Silicon Transistor for High Definition CRT Display Video Output Applications(用于高分辨率CRT显示视频输出应用的NPN硅外延平面型晶体 瑞展硅晶体管高清晰度CRT显示器视频输出应用(用于高分辨率CRT显示器显示视频输出应用的npn型硅外延平面型晶体管
PNP/NPN Epitaxial Planar Silicon Transistors
From old datasheet system
PNP Epitaxial Planar Silicon Transistor High Definition CRT Display Video Output Applications
NPN Epitaxial Planar Silicon Transistor High Definition CRT Display Video Output Applications

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    2SC4826 2SA1852 0169

SANYO[Sanyo Semicon Device]
Part No. 2SC4826 2SA1852 0169
OCR Text ...es * * * * * Adoption of fbet process. High fT : fT=300MHz(typ). High breakdown voltage : VCEO=200V. Small reverse transfer capacitance and excellent high -frequency characteristic : Cre=1.5pF / NPN, 1.8pF / PNP. Shipped in reel tape...
Description NPN Epitaxial Planar Silicon Transistors High Definition CRT Display Video Output Applications
PNP Epitaxial Planar Silicon Transistors High Definition CRT Display Video Output Applications
PNP/NPN Epitaxial Planar Silicon Transistors
From old datasheet system

File Size 26.72K  /  4 Page

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    Sanyo
Part No. 2SC4827 2SA1853 0170
OCR Text ...827] Features * Adoption of fbet process. * High fT : fT=300MHz. * High breakdown voltage : VCEO=200V. * Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.2pF/NPN, 2.7pF/PNP. * Possible to offer the ...
Description NPN Epitaxial Planar Silicon Transistor High Definition CRT Display Video Output Applications
PNP Epitaxial Planar Silicon Transistor High Definition CRT Display Video Output Applications
From old datasheet system
PNP/NPN Epitaxial Planar Silicon Transistors

File Size 108.36K  /  4 Page

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    Sanyo
Part No. 2SK2218 1025
OCR Text ...ations Features * Adoption of fbet process. * Amateur radio equipment. * UHF amplifiers, MIX, OSC, analog switches. * Large | yfs |. * Small Ciss. Package Dimensions unit:mm 2125 [2SK2218] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 ...
Description High-Frequency Low-Noise Amplifier Applications
From old datasheet system
N-Channel Junction Silicon FET

File Size 212.16K  /  6 Page

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    Sanyo Electric Co., Ltd.
Part No. 2SK2219 1026 2SK2219-21 2SK2219-23
OCR Text ...t characteristic. * Adoption of fbet process. Package Dimensions unit:mm 2058A [2SK2219] 0.425 0.3 3 0.15 2.1 1.250 0 to 0.1 0.425 1 2 0.65 0.65 2.0 0.3 0.9 0.6 0.2 Specifications Absolute Maximum Ratings ...
Description 1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
N-Channel Junction FET for Capacitor Microphone Applications(应用于电容器话筒的N沟道结型场效应管) N沟道场效应晶体管的结电容麦克风应用(应用于电容器话筒沟道结型场效应管
From old datasheet system
N-Channel Junction Silicon FET

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    Sanyo
Part No. 2SA1682 0113
OCR Text ...ratio : 1.0 typ). * Adoption of fbet process. C : Collector B : Base E : Emitter Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector ...
Description PNP Epitaxial Planar Silicon Transistor TV Camera Deflection, High-Voltage Driver Applications
From old datasheet system

File Size 69.51K  /  3 Page

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    Sanyo
Part No. 2SC4027 0103
OCR Text ... 1.5 Features * Adoption of fbet, MBIT processes. * High voltage and large current capacity. * Fast switching time. * Small and slim package permitting 2SA1522/ 2SC4027-applied sets to be made more compact. 2.3 0.5 0.85 0.7 0....
Description PNP/NPN Epitaxial Planar Silicon Transistors
From old datasheet system

File Size 56.74K  /  5 Page

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    Sanyo
Part No. 2SK771 1097
OCR Text ... 0.5 Features * Adoption of fbet process. * Ultrasmall-sized package permitting sets to be made smaller and slimmer. 0.4 3 0.16 0 to 0.1 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta...
Description N-Channel Junction Silicon FET
From old datasheet system

File Size 78.22K  /  3 Page

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    Sanyo
Part No. 2SA1434 0071
OCR Text ... smaller, slimer. * Adoption of fbet process. * High DC current gain (hFE=500 to 1200). * Low collector-to-emitter saturation voltage (VCE(sat)0.5V). * High VEBO (VEBO15V). 1 : Emitter 2 : Collector 3 : Base Specifications Absolute M...
Description PNP Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amp Applications
From old datasheet system

File Size 74.86K  /  3 Page

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For fbet Found Datasheets File :: 490    Search Time::3.281ms    
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