e-amps adc. pdf Datasheet P9 Full Text Search --- IC-ON-LINE


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e-amps adc. Datasheet PDF File

For e-amps adc. Found Datasheets File :: 3095 Search Time::1.813ms
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				MOTOROLA[Motorola, Inc]
Part No.	MTP10N10E ON2538
OCR Text	...fect Transistor This advanced "E" series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation modes....AMPS) 1.1 12 6V 1 8 5V 0.9 4 4V 0 8 12 16 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLT...
Description	From old datasheet system TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM
File Size	237.69K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
Part No.	MTP10N40 MTP10N40E ON2540 MTP10N40E-D
OCR Text	E-FET.TM High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high...AMPS) 16 VGS = 10 V 1.2 VDS = VGS ID = 0.25 mA 7V 1.1 12 6V 8 1 0.9 4 5V 0 0...
Description	TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS From old datasheet system
File Size	249.12K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola, Inc] http://
Part No.	MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06EZL-D
OCR Text	E-FET.TM High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy i...AMPS) 18 VGS = 10 V 8V 6V 24 7V I D , DRAIN CURRENT (AMPS) 5V 18 TJ = - 55C 25C 12 100C 6 VDS 10 V ...
Description	TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
File Size	221.74K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
Part No.	MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D
OCR Text	E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high ener...AMPS) 20 8V 16 7V 12 8 4 0 0 2 3 4 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1 5 6V 5V VGS = 10 V 9V I D,...
Description	TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM TMOS POWER FET 12 AMPERES 60 VOLTS From old datasheet system
File Size	239.56K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MTP12P10 MTP12P10_D ON2547
OCR Text	...) 20 18 -I D, DRAIN CURRENT (AMPS) 16 14 12 10 8 6 4 2 0 0 1 VGS = -20 V TJ = 25C 1.2 VDS = VGS ID = 1 mA 10 V 1.1 8V 7V 1 0.9 6V 5V 0.8 2 3 4 5 6 7 8 9 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 10 -50 ...
Description	From old datasheet system TMOS POWER FET 12 AMPERES 60 VOLTS TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM
File Size	190.83K / 6 Page	View it Online	Download Datasheet

				ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP1302 MTP1302_D ON2549 ON2548
OCR Text	E-FETTM High Density Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high cell density HDTMOS power FET is designed to wit...AMPS) 30 25 20 15 10 5.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VDS, DRAIN-TO-SOURCE VOLTAGE (V...
Description	TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm From old datasheet system
File Size	163.19K / 8 Page	View it Online	Download Datasheet

				ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP1306 MTP1306_D ON2551 ON2550
OCR Text	E-FET.TM High Density Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high-cell density HDTMOS power FET is designed to wi...AMPS) 125 TJ = 25C 100 75 50 25 0 0 0.5 1.0 1.75 0.25 0.75 1.25 1.5 VDS, DRAIN-TO-SOURCE VOLTAGE (VO...
Description	TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM From old datasheet system
File Size	168.21K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP15N06VL MTP15N06VL_D ON2553
OCR Text	... devices. Just as with our TMOS E-FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed ...AMPS) 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 5V TJ = 25C VGS = 10V 9V 50 8V 7V I D , DRAIN ...
Description	TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM From old datasheet system
File Size	215.91K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP15N06V ON2554
OCR Text	... devices. Just as with our TMOS E-FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed ...AMPS) 25 20 15 10 5V 5 0 6V 9V I D , DRAIN CURRENT (AMPS) 7V VGS = 10 V 8V 30 VDS 10 V 25 20 15 10 ...
Description	TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM From old datasheet system
File Size	163.67K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola, Inc]
Part No.	MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D
OCR Text	E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high ener...AMPS) 24 VGS = 10 V 32 8V 7V I D , DRAIN CURRENT (AMPS) 24 VDS 10 V 16 6V 16 8 5V 0 ...
Description	TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM From old datasheet system
File Size	222.23K / 8 Page	View it Online	Download Datasheet

For e-amps adc. Found Datasheets File :: 3095 Search Time::1.813ms
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