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  depletion-mode Datasheet PDF File

For depletion-mode Found Datasheets File :: 602    Search Time::2.5ms    
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    MC33502D MC33502P

ON Semiconductor
Part No. MC33502D MC33502P
OCR Text ...m s is achieved with high speed depletion mode nmos (dnmos) and vertical pnp transistors. this device is characterized over a temperature range of 40 c to 105 c. circuit information input stage one volt railtorail performance is achieved ...
Description LOW VOLTAGE RAIL-TO-RAIL DUAL OPERATIONAL AMPLIFIER DUAL OP-AMP, 7000 uV OFFSET-MAX, 5 MHz BAND WIDTH, PDSO8
Single Output LDO, 400mA, Fixed(2.85V), Low Noise, Fast Transient Response 5-SOT-23 -40 to 85 低电压轨至轨双路运算放大
Single Output LDO, 400mA, Fixed(2.85V), Low Noise, Fast Transient Response 5-SOT-23 -40 to 85 DUAL OP-AMP, 7000 uV OFFSET-MAX, 5 MHz BAND WIDTH, PDIP8

File Size 332.77K  /  15 Page

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    MC33502-D

ON Semiconductor
Part No. MC33502-D
OCR Text ...m s is achieved with high speed depletion mode nmos (dnmos) and vertical pnp transistors. this device is characterized over a temperature range of 40 c to 105 c. circuit information input stage one volt railtorail performance is achieved ...
Description 1.0 V, Rail-to-Rail, Dual Operational Amplifier

File Size 214.35K  /  16 Page

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    DS2760TA-025 DS2760T-025 DS2760EA-025 DS2760XA-025

http://
DALLAS SEMICONDUCTOR
Part No. DS2760TA-025 DS2760T-025 DS2760EA-025 DS2760XA-025
OCR Text ...is unaffected by severe battery depletion, accidental shorts or esd events. lockable eeprom becomes rom when locked to provide additional s...mode when it senses the closure of a switch to vss on this pin. pin has an internal 1 a pull-up. ...
Description High Precision Li-Ion Battery Monitor
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16
128 x 128 pixel format, LED or EL Backlight available
122 x 32 pixel format, LED or EL Backlight available

File Size 129.22K  /  25 Page

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    EB200P70-AJ FPD200P70 FPD200P701

Filtronic Compound Semiconductors
Part No. EB200P70-AJ FPD200P70 FPD200P701
OCR Text ...N: The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 200 mm Schottky barrier Gate, defined by high-resolution stepperbased photolithography. TYPICAL...
Description HIGH FREQUENCY PACKAGED PHEMT

File Size 355.87K  /  9 Page

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    EB750DFN-BA EB750DFN-BB EB750DFN-BC EB750DFN-BE FPD750DFN1 EB750DFN-AJ FPD750DFN

Filtronic Compound Semiconductors
Part No. EB750DFN-BA EB750DFN-BB EB750DFN-BC EB750DFN-BE FPD750DFN1 EB750DFN-AJ FPD750DFN
OCR Text ...N: The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 750 m Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The recessed...
Description LOW NOISE HIGH LINEARITY PACKAGED PHEMT

File Size 322.37K  /  9 Page

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    DS2761 DS2761AE DS2761AE-025 DS2761AX DS2761AX-025 DS2761BE DS2761BE-025 DS2761BX DS2761BX-025

Dallas Semiconducotr
Part No. DS2761 DS2761AE DS2761AE-025 DS2761AX DS2761AX-025 DS2761BE DS2761BE-025 DS2761BX DS2761BX-025
OCR Text ...is unaffected by severe battery depletion, accidental shorts, or ESD events. Lockable EEPROM becomes ROM when locked to provide additional s...mode (with SWEN = 0), any capacitance or voltage source connected to PLS is discharged internally to...
Description High-Precision Li Battery Monitor

File Size 286.36K  /  25 Page

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    FPD1000AS-EB FPD1000AS FPD1000AS1

Filtronic Compound Semicond...
Filtronic Compound Semiconductors
Part No. FPD1000AS-EB FPD1000AS FPD1000AS1
OCR Text ...N: The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. * * Drivers o...
Description 1W PACKAGED POWER PHEMT

File Size 456.99K  /  11 Page

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    MRFIC1806

MOTOROLA[Motorola, Inc]
Part No. MRFIC1806
OCR Text .... The amplifier portion employs depletion mode power GaAs MESFETs to produce +21 dBm output with 0 dBm input. The ramping circuit controls the burst-mode transmit rise and fall time and is adjustable through external components. This circui...
Description 1.8 GHz DRIVER AMPLIFIER AND RAMP CIRCUIT GaAs MONOLITHIC INTEGRATED CIRCUIT

File Size 276.89K  /  12 Page

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    FPD2000AS-EB FPD2000AS FPD2000AS1

Filtronic Compound Semiconductors
Part No. FPD2000AS-EB FPD2000AS FPD2000AS1
OCR Text ...N: The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. TYPICAL AP...
Description 2W PACKAGED POWER PHEMT

File Size 320.19K  /  10 Page

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    Infineon Technologies
Part No. 3B1565J
OCR Text ...th integrated 650V Startup Cell/Depletion CoolMOSTM Power Management & Supply Never stop thinking. CoolSETTM-F3 ICE3Bxx65J R...Mode Controller with integrated 650V Startup Cell/Depletion CoolMOSTM Product Highlights * Active B...
Description Search --To ICE3B1565J

File Size 534.36K  /  26 Page

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For depletion-mode Found Datasheets File :: 602    Search Time::2.5ms    
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