|
|
|
Ricoh
|
Part No. |
R3131N26EA5-TR R3131NXXXA R3130NXXXA R3130N36EA-TR R3130N30HA8-TR R3130N30BC8-TR R3130N30AC8-TR R3130N30EC8-TR R3130NXXXC R3131NXXXC R3130N30AA8-TR R3130N30BA8-TR R3130N30DA8-TR R3130N30EA8-TR
|
Description |
Low Voltage Detector with built-in Delay circuit Low Voltage Detector with built in Delay circuit Low voltage detector with built-in delay circuit. Detector threshold 3.6V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR. Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Output delay time 400ms. Output type Nch open drain. Taping type TR. Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Output delay time 100ms. Output type CMOS. Taping type TR. Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Output delay time 50ms. Output type CMOS. Taping type TR. Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Standard output delay time 240ms. Output type CMOS. Taping type TR. Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Output delay time 50ms. Output type Nch open drain. Taping type TR. Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Output delay time 100ms. Output type Nch open drain. Taping type TR. Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Output delay time 200ms. Output type Nch open drain. Taping type TR. Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR.
|
File Size |
271.11K /
32 Page |
View
it Online |
Download Datasheet |
|
|
|
INTERSIL[Intersil Corporation]
|
Part No. |
BD795 BD798 BD796 BD801 BD802 BD800 BD799 BD797
|
Description |
EPITAXIAL-BASE,SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84% EPITAXIAL-BASE/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
File Size |
138.23K /
3 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|