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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
TM15T3A-H TM15T3A-M
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| OCR Text |
..., VDRM applied Tj=125C, ITM=IFM=75a, instantaneous meas. Tj=125C, VD=2/3VDRM Tj=25C, VD=6V, RL=2 Tj=125C, VD=1/2VDRM Tj=25C, VD=6V, RL=2 Junction to case (per 1/6 module) Case to fin, Conductive grease applied (per 1/6 module) Measured with... |
| Description |
MEDIUM POWER GENERAL USE INSULATED TYPE
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| File Size |
54.93K /
4 Page |
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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
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| Part No. |
C380A C380B C380D C380C C380E C380PA
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| OCR Text |
...0v looa/^sec switch from <1000v 75a/fisec switch from <1200v 50a//xsec switch from <1300v 25a//isec i't (for fusing) (for times ^ 1.5 millis...800v peak 900v peak 1 000 v peak 1100v peak 1200v peak 1300v peak tc ^c vfom -rom, ^vpeak 300v peak ... |
| Description |
The C380 Series of high power devices feature the proven, all-diffused construction used in the C180 Series
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| File Size |
141.92K /
3 Page |
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Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
TM25CZ-H TM25CZ-M TM25DZ-H TM25DZ-M
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| OCR Text |
...125C, VDRM applied Tj=125C, ITM=75a, instantaneous value Tj=125C, VD=2/3VDRM Tj=25C, VD=6V, RL=2 Tj=125C, VD=1/2VDRM Tj=25C, VD=6V, RL=2 Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with... |
| Description |
MEDIUM POWER GENERAL USE INSULATED TYPE 中功率常规使用绝缘型
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| File Size |
73.41K /
5 Page |
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it Online |
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Sanyo
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| Part No. |
2SC4601
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| OCR Text |
...V, IC=0.1A VCB=10V, f=1MHz IC=0.75a, IB=0.15A 1100 800 7 800 0.5 3.0 0.3 Conditions Ratings min typ 15 35 2.0 1.5 max Unit MHz pF V V V V V V s s s
IC=0.75a, IB=0.15A V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=5mA, RBE= V(BR)EBO IE=1mA, IC=0 VCEO... |
| Description |
NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications
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| File Size |
113.53K /
4 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4521 IGW60T120
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| OCR Text |
...R CURRENT
10A
50s 150s
75a
50A
Ic
Ic
1A
500s
25A
20ms DC
0A 10Hz
100Hz
1kHz
10kHz
100kHz
0,1A ...800v
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junctio... |
| Description |
IGBTs & DuoPacks - 60A 1200V TO247 IGBT
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
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| File Size |
404.35K /
12 Page |
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NIEC[Nihon Inter Electronics Corporation]
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| Part No. |
PGH758AM
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| OCR Text |
75a / 800v FEATURES
* Isolated Base * 3 Phase Converter with Rush-Current Controllable Thyristor * High Surge Capability * UL Recognized, File No. E187184
PGH758AM
OUTLINE DRAWING
Nut
TYPICAL APPLICATIONS
* Converter For UPS , VVV... |
| Description |
THYRISTOR MODULE 75a / 800v
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| File Size |
233.47K /
4 Page |
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it Online |
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Price and Availability
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