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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
BA01303
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| OCR Text |
... usec No oscillation more than -36dbm 1.1 1.3 1.3 960 1880 1990 1.3 1.5 1.5 MHz
Insertion loss (Rx)
IL
Vcont1,2,3=0V Vcont1,2,3=0V Vcont1,2=0V, Vcont3=2.6V
925 1805 1930 -
dB
Jan./2004 (2/3)
MITSUBISHI SEMICONDUCTOR <In... |
| Description |
Triple Band(EGSM900/DCS1800/PCS1900) InGaP HBT Front-end module
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| File Size |
84.26K /
3 Page |
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it Online |
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CREE[Cree, Inc]
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| Part No. |
CGH35030F
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| OCR Text |
...16
1.5 EVM @ 21dBm 1.0 EVM @ 36dbm Efficiency 0.5
12
8
4
0.0 3.3 3.4 3.5 3.6 3.7
0
Frequency (GHz)
Note: Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding T... |
| Description |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
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| File Size |
653.35K /
8 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
EGN21A180IV
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| OCR Text |
...
r P
im l e
Pin=30dBm Pin=36dbm IMD [dBc]
a in
-20 -25 -30 -35 -40 -45 -50 -55 0.1
y r
40 Drain Effi. 30 20 10 0
20 22 24 26 28 30 32 34 36 38 40 42 Input Power [dBm]
2-tone IMD vs. Tone Spacing, VDS=50V, IDS=1.0A Pout... |
| Description |
High Voltage - High Power GaN-HEMT
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| File Size |
230.17K /
4 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
EGN35A180IV
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| OCR Text |
... Dissipasion [W]
im l e
Pin=36dbm
a in
ry
Input Power [dBm]
50 40 30 20 10 0
24 26 28 30 32 34 36 38 40 42 44 46
Power Derating Curve
300 250 200 150 100 50 0 0 50 100 150 200
o
250
300
Case Temperature [ C]... |
| Description |
High Voltage - High Power GaN-HEMT
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| File Size |
103.92K /
4 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
ESN26A030MK EGN26A030MK
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| OCR Text |
...n=20dBm Pin=32dBm Pin=24dBm Pin=36dbm
r P
80 70 60 50 40 30 20 10 0 Total Power Dissipasion [W]
im l e
Pin=28dBm
a in
19 21
ry
29 31 33 35 37 Input Power [dBm]
50 40 30 20 10 0
23 25 27
Power Derating Curve
0
... |
| Description |
High Voltage - High Power GaN-HEMT
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| File Size |
99.98K /
4 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
ESN35A030MK EGN35A030MK
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| OCR Text |
...n=20dBm Pin=32dBm Pin=24dBm Pin=36dbm
r P
80 70 60 50 40 30 20 10 0 Total Power Dissipasion [W]
im l e
Pin=28dBm
a in
ry
Input Power [dBm]
40 30 20 10 0
18 20 22 24 26 28 30 32 34 36 38
Power Derating Curve
0
5... |
| Description |
High Voltage - High Power GaN-HEMT
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| File Size |
100.62K /
4 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
FLL600IQ-2C
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| OCR Text |
...Tuned
50 44 48 46
40dBm 38dBm 36dbm 34dBm 32dBm 30dBm
OUTPUT POWER & add vs. INPUT POWER VDS =12V IDS = 1.5A f = 2.17GHz Wide Band Tuned
48 46
Output Power (dBm)
42 40 38 36 34 32 30
Pout
50 40 30 20 10
20 24 28 32 36 40
... |
| Description |
L-Band High Power GaAs FET
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| File Size |
116.74K /
4 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
FLM5359-25F
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| OCR Text |
...ower (dBm)
45 44 43 42 41
36dbm
34dBm
50
30 20 10
32dBm
5.3
5.5
5.7
5.9
26
28
30
32
34
36
38
Frequency (GHz)
Input Power (dBm)
2
add (%)
40
IM3 (dBc)
-30
FLM5359-25F... |
| Description |
C-Band Internally Matched FET
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| File Size |
294.71K /
4 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
FLM5359-35F
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| OCR Text |
...=38dBm
Output Power [dBm]
36dbm
34dBm
42 41 40 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 Frequency [GHz]
32dBm
2
Power Added Efficiency [%]
FLM5359-35F
C-Band Internally Matched FET
S-PARAMETER
+50j +25j
10 25
+90
+... |
| Description |
C-Band Internally Matched FET
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| File Size |
186.96K /
5 Page |
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it Online |
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Price and Availability
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