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M.S. Kennedy Corp.
M.S. Kennedy, Corp.
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| Part No. |
DHC2800S DHC2803SE DHC2803SH DHC2805SE DHC2805SK
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| OCR Text |
...egulation i out ; min ? max 3 10 25 10 25 mvdc temperature coefficient .006 .006 %/c temperature range, case 2 C55 125 C55 125 c quiescent...80v 40v 1.8a load 1.8a v out i out i out i out 1 v 500ma 1 v 500ma 100mv 20v 50mv 10v 1 v 10 v 1 v 5... |
| Description |
5V, 6W DC-DC converter
3.3V, 6W DC-DC converter
6W DC-DC Converter(输出功率6W，高隔离电压的DC-DC转换 6W的DC - DC转换器（输出功率6W，高隔离电压的的DC - DC转换器）
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| File Size |
169.50K /
6 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO4444L
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| OCR Text |
... dss 80 v v ds =80v, v gs =0v 10 t j =55c 50 i gss 100 na v gs(th) gate threshold voltage 2.6 3 3.8 v i d(on) 80 a 10 12 t j =125c 18 22 11.6 14.5 m ? g fs 32 s v sd 0.7 1 v i s 4.5 a c iss 1900 2386 2865 pf c oss 190 276 360 pf c rss 60 ... |
| Description |
80V N-Channel MOSFET
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| File Size |
583.69K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHNA597160 IRHNA593160
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| OCR Text |
...-30 -188 250 2.0 20 400 -47 25 -10 -55 to 150 300 ( for 5s ) 3.3 ( Typical )
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
...80V ,VGS=0V VDS = -80V, VGS = 0V, TJ =125C VGS = -20V VGS = 20V VGS =-12V, ID = -47A VDS = -50V VDD ... |
| Description |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
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| File Size |
126.64K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BSP316P
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| OCR Text |
...0V, VGS =0, Tj =150C
A -0.1 -10 -10 1.5 1.4 -0.2 -100 -100 2.3 1.8 nA
Gate-source leakage current
VGS =-20V, VDS =0
Drain-source ...80V, ID =-0.68A, VGS =0 to -10V VDD =-80V, ID =-0.68A
Symbol
Conditions min.
Values typ. 1 ... |
| Description |
Low Voltage MOSFETs - Small Signal MOSFET, -100V, SOT-223, RDSon =1.80
SIPMOS Small-Signal-Transistor
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| File Size |
81.51K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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