0.208 pdf Datasheet P9 Full Text Search --- IC-ON-LINE


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0.208 Datasheet PDF File

For 0.208 Found Datasheets File :: 22962 Search Time::4.593ms
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				HITACHI[Hitachi Semiconductor]
Part No.	2SJ479 2SJ479L 2SJ479S
OCR Text	...I DSS I GSS Min -30 20 -- -- -1.0 -- -- 12 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 25 40 20 1700 950 260 20 290 170 130 -1.1 70 Max -- -- -10 10 -2.0 35 60 -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF ns ns ns ns V ns I...
Description	Power switching MOSFET Silicon P Channel DV-L MOS FET High Speed Power Switching Silicon P Channel DVL MOS FET High Speed Power Switching
File Size	37.54K / 7 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ483
OCR Text	... * Low on-resistance R DS(on) = 0.08 typ (at VGS = -10 V, I D = -2.5 A) * 4V gate drive devices. * Large current capacitance ID = -5 A Outline TO-92MOD. D G 3 S 2 1 1. Source 2. Drain 3. Gate 2SJ483 Absolute Maximu...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	42.73K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ484
OCR Text	... * Low on-resistance R DS(on) = 0.18 typ. (at V GS = -10V, ID = -1A) * Low drive current * High speed switching * 4V gate drive devices. Outline UPAK 2 3 1 4 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SJ484 Absolute M...
Description	Silicon P-Channel MOS FET High Speed Power Switching
File Size	42.55K / 9 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ486
OCR Text	... * Low on-resistance R DS(on) = 0.5 typ. (at V GS = -4V, ID = -100 mA) * 2.5V gate drive devices. * Small package (MPAK). Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SJ486 Absolute Maximum Ratings (Ta = 25C) ...
Description	RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开 Silicon P Channel MOS FET Low FrequencyPower Switching Silicon P-Channel MOS FET
File Size	40.30K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ496
OCR Text	... * Low on-resistance R DS(on) = 0.12 typ. (at VGS = -10 V, I D = -2.5 A) * 4V gate drive devices. * Large current capacitance ID = -5 A Outline TO-92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SJ496 Absolute Maximum Ra...
Description	Silicon P-Channel MOS FET High Speed Power Switching
File Size	49.68K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ504
OCR Text	... * Low on-resistance R DS(on) = 0.042 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220FM D G S 12 1. Gate 2. Drain 3. Source 3 2SJ504 Absolute Maximum Ratings (Ta = 25C) Item...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.21K / 10 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ505 2SJ505L 2SJ505S
OCR Text	... * Low on-resistance R DS(on) = 0.017 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline LDPAK 4 D 1 G 1 4 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ505(L), 2SJ505(S) Absolut...
Description	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开 Power switching MOSFET
File Size	53.43K / 10 Page	View it Online	Download Datasheet

				Renesas Electronics, Corp. HITACHI[Hitachi Semiconductor]
Part No.	2SJ506 2SJ506L 2SJ506S
OCR Text	... * Low on-resistance R DS(on) = 0.065 typ. (at V GS = -10V, ID = -5A) * Low drive current * High speed switching * 4V gate drive devices. Outline DPAK-2 4 D 4 12 G 3 12 S 3 1. Gate 2. Drain 3. Source 4. Drain 2S...
Description	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开 Power switching MOSFET
File Size	49.71K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ517
OCR Text	... * Low on-resistance R DS(on) = 0.18 typ. (at V GS =-4V, ID =-1A) * Low drive current * High speed switching * 2.5V gate drive devices. Outline UPAK 3 D 2 1 4 G S 1. Gate 2. Drain 3. Source 4. Drain 2SJ517 Absol...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	42.79K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ518
OCR Text	... * Low on-resistance R DS(on) = 0.35 typ. at (V GS = -10V, ID = -1A) * Low drive current * 4 V gete drive devices * High speed switching Outline UPAK 3 D 2 1 4 G S 1. Gate 2. Drain 3. Source 4. Drain 2SJ518 Abso...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	46.74K / 9 Page	View it Online	Download Datasheet

For 0.208 Found Datasheets File :: 22962 Search Time::4.593ms
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