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SPP5413 LAN7500I LT1764A CRO2343A DAC1136K MT90871 HV5812WG 1907X353
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  -13a Datasheet PDF File

For -13a Found Datasheets File :: 5386    Search Time::1.343ms    
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    FQB13N50C08 FQB13N50CTM

Fairchild Semiconductor
Part No. FQB13N50C08 FQB13N50CTM
OCR Text ...alf bridge topology. features  13a, 500v, r ds(on) = 0.48 ? @v gs = 10 v  low gate charge ( typical 43nc)  low crss ( typical 20pf)  fast switching  100% avalanche tested  improved dv/dt capability absolute maximum ratings ...
Description 500V N-Channel MOSFET

File Size 924.64K  /  9 Page

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    IRF7805TR IRF7805ATR

International Rectifier
Part No. IRF7805TR IRF7805ATR
OCR Text ...unction temperature. i sd 13a, di/dt 110a/s, v dd v (br)dss , t j 150c pulse width 300s; duty cycle when mounted on 1 inch square copper board, t<10 sec ...
Description 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 103.27K  /  7 Page

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    RSD131P10

Rohm
Part No. RSD131P10
OCR Text 13a power mosfet l outline v dss - 100v cpt3 (sc-63) <sot-428> r ds(on) (max.) 200m w i d - 13a p d 20w l features l inner circuit 1) low on-resistance. 2) fast switching speed. 3) drive circuits can be simple. 4) parallel use is easy. 5...
Description Pch 100V 13A Power MOSFET

File Size 503.67K  /  13 Page

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    2SK3608-01L03 2SK3608-01S 2SK3608-01SJ

Fuji Electric
Part No. 2SK3608-01L03 2SK3608-01S 2SK3608-01SJ
OCR Text ...v gs =0v f=1mhz v cc =100v i d =13a v gs =10v l=620 h t ch =25c i f =13a v gs =0v t ch =25c i f =13a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj kv/s kv/s w c c 200 3.0 5.0 25 250 10 100 131 170 5.5 11 770 1155 110 16...
Description N-CHANNEL SILICON POWER MOSFET

File Size 255.74K  /  4 Page

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    2SK3607-01MR

Fuji Electric
Part No. 2SK3607-01MR
OCR Text ...v gs =0v f=1mhz v cc =100v i d =13a v gs =10v l=620 h t ch =25c i f =13a v gs =0v t ch =25c i f =13a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj kv/s kv/s w c c kvrms 200 3.0 5.0 25 250 10 100 131 170 5.5 11 770 1155 ...
Description N-CHANNEL SILICON POWER MOSFET

File Size 105.60K  /  4 Page

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    2SK3606-0103

Fuji Electric
Part No. 2SK3606-0103
OCR Text ...v gs =0v f=1mhz v cc =100v i d =13a v gs =10v l=620 h t ch =25c i f =13a v gs =0v t ch =25c i f =13a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj kv/s kv/s w c c 200 3.0 5.0 25 250 10 100 131 170 5.5 11 770 1155 110 16...
Description N-CHANNEL SILICON POWER MOSFET

File Size 102.43K  /  4 Page

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    IXFR26N100P

IXYS Corporation
Part No. IXFR26N100P
OCR Text ... ma r ds(on) v gs = 10v, i d = 13a, note 1 430 m features ? silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation ? low drain to tab capacitance(...
Description Polar Power MOSFET HiPerFET

File Size 102.64K  /  4 Page

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    IXFC26N50P

IXYS Corporation
Part No. IXFC26N50P
OCR Text ....3 c note: test current i t = 13a isoplus220 outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,...
Description PolarHV HiPerFET Power MOSFET ISOPLUS 220

File Size 167.24K  /  5 Page

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    SML100M12MSF

Seme LAB
Part No. SML100M12MSF
OCR Text ...in-source on-resistance i d = 13a, v gs = 3v, t j = 25c - 0.09 0.15 i d = 13a, v gs = 3v, t j = 175c - 0.29 - q g total gate charge v ds = 600v, i d = 13a, v gs = 0v to +3v - 28 - nc q gs gate-...
Description NORMALLY-OFF SILICON CARBIDE POWER JFET

File Size 103.43K  /  3 Page

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    International Rectifier, Corp.
Part No. IRFR13N20DTRR
OCR Text ... r ds(on) max i d 200v 0.235 w 13a typical smps topologies l telecom 48v input forward converters parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 13 i d @ t c = 100c continuous drain current, v gs @ 10v 9....
Description TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 13A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|3A条(丁)|52AA

File Size 210.30K  /  10 Page

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