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Integrated Device Technology, Inc.
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| Part No. |
IDT72T54262
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| OCR Text |
... enable wen and chip se lect wcs input for each write port ? ? ? ? ? read enable ren and chip select rcs input for each read port ? ? ? ? ? user selectable idt standard mode (using ef and ff ) or fwft mode (using ir and or ... |
| Description |
2.5V QUAD/DUAL TeraSyncDDR/SDR FIFO x10 QUAD FIFO or x10/x20 DUAL FIFO CONFIGURATIONS 2.5V的四/双TeraSync⑩复特别提款权先进先出10的四双FIFO或x10/x20先进先出配置
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| File Size |
549.71K /
56 Page |
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it Online |
Download Datasheet
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Samsung Electronic
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| Part No. |
CMOSDRAM
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| OCR Text |
...vice timing diagram cmos dram t wcs note : d out = open write cycle ( early write ) ras v ih - v il - v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - v ih - v il - column address row address t ras t r... |
| Description |
EDO Mode, x4 and x8 Device Timing Diagram
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| File Size |
315.34K /
12 Page |
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it Online |
Download Datasheet |
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OKI SEMICONDUCTOR CO., LTD.
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| Part No. |
MSM518128-45JS
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| OCR Text |
...lead time data-in set-up time t wcs t wch t wcr t wp t rwl t cwl t ds data-in hold time t dh data-in hold time from ras t dhr cas to we delay time t cwd column address to we delay time t awd ras to we delay time cas active delay t... |
| Description |
131,072-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 131,072字8位动态随机存储器：快速页面模式型
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| File Size |
216.59K /
15 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM372V400CK
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| OCR Text |
... ms write command set-up time t wcs 0 0 ns 7 cas to w dealy time t cwd 36 40 ns 7 column address to w delay time t awd 48 55 ns 7
dram module kmm372v410ck/cs kmm372v400ck/cs test condition : v ih /v il =2.0/0.8v, v oh /v ol =2.0/0.8... |
| Description |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V 4米72的DRAM内存ECC的使Mx4KK刷新.3
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| File Size |
412.16K /
19 Page |
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it Online |
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