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Hitachi,Ltd.
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Part No. |
HVU200A
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Description |
29.75 pF, 32 V, SILICON, variable CAPACITANCE DIODE variable Capacitance Diode for Electronic Tuning(?ㄤ??佃?璋??????靛?浜??绠?
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File Size |
25.96K /
4 Page |
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AVX, Corp.
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Part No. |
CTZ2E-03A-X1-P CTZ3E-20C-B-P CTZ3S-40C-W-5-PF CTZ3E-20C-B-5-PF CTZ3S-40C-B5-PF
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Description |
CAPACITOR, variable, 25 V, 4.5 pF - 40 pF, HORIZONTAL ADJUSTER, SURFACE MOUNT CAPACITOR, variable, CERAMIC-MULTILAYER, 25 V, 5 pF - 20 pF, VERTICAL ADJUSTER, SURFACE MOUNT CAPACITOR, variable, 25 V, 4.5 pF - 40 pF, VERTICAL ADJUSTER, SURFACE MOUNT CAPACITOR, variable, 25 V, 4.5 pF - 20 pF, VERTICAL ADJUSTER, SURFACE MOUNT CAPACITOR, variable, 25 V, 2 pF - 3 pF, VERTICAL ADJUSTER, SURFACE MOUNT
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File Size |
98.53K /
4 Page |
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Integrated Device Technology, Inc.
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Part No. |
IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162374CTPAB IDT54FCT162374ETPAB IDT54FCT162374ATPAB IDT54FCT162374ATPVB IDT54FCT16374CTPAB IDT54FCT16374ETPAB IDT54FCT16374CTPV IDT54FCT162374TEB IDT54FCT16374CTPF IDT54FCT162374TPFB IDT54FCT162374ATEB IDT54FCT16374ATPAB IDT54FCT162374ETPV IDT54FCT16374ETE IDT54FCT162374CTPVB IDT54FCT162374CTPFB
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Description |
FAST CMOS 16-BIT REGISTER (3-STATE) variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6 variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6 variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6 variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
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File Size |
126.14K /
8 Page |
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GSI Technology, Inc.
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Part No. |
G331-8I-20 SG222-6I-20 G561-8I-20 G271-8I-20 SG682-6I-20 G104-3F-20 SG821-8I-20
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Description |
UNSHIELDED, 0.24 uH - 0.33 uH, variable INDUCTOR UNSHIELDED, 1.5 uH - 2.2 uH, variable INDUCTOR UNSHIELDED, 0.4 uH - 0.56 uH, variable INDUCTOR UNSHIELDED, 0.19 uH - 0.27 uH, variable INDUCTOR UNSHIELDED, 4.5 uH - 6.8 uH, variable INDUCTOR UNSHIELDED, 50 uH - 100 uH, variable INDUCTOR UNSHIELDED, 0.59 uH - 0.82 uH, variable INDUCTOR
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File Size |
57.23K /
1 Page |
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ZETEX[Zetex Semiconductors] Zetex Semiconductor PLC
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Part No. |
ZMV831ATA ZMV831BTA ZV831 ZV831BV2TA ZMV832ATA ZMV832BTA ZV832BV2TA ZMV835ATA ZMV835BTA ZMDC832BTA ZMV833ATA ZMV833BTA ZMV829ATA ZDC834ATA ZC832ATA ZMV829 ZMV830ATA ZMV830BTA ZMV834ATA ZMV834BTA ZMDC830 ZMDC831BTA ZC829 ZC829ATA ZC829BTA ZC830ATA ZC830BTA ZC831ATA ZC831BTA ZC832BTA ZC833ATA ZC833BTA ZC834ATA ZC834BTA ZC835ATA ZC835BTA ZC836ATA ZC836BTA ZDC833 ZDC833ATA ZMV829BTA 830 ZC831B ZMDC831B ZMV831B ZV831BV2 ZMV830A ZMV830B ZV832BV2 ZC830A 829B ZC821 835A 834B 830B 836B ZC820 ZC826 ZC822 ZC823 ZC824 ZC825 ZMV829A ZMV829B 836A 832B 831A 834A 833A 833B ZC829A ZC829B ZMV833B ZMV832B ZMV832A ZMV831A
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Description |
SILICON 28V HYPERABRUPT VARACTOR DIODES SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES 47 pF, 25 V, SILICON, HYPERABRUPT variable CAPACITANCE DIODE SILICON 28V HYPERABRUPT VARACTOR DIODES 8VHYPERABRUPT变容二极 25 Volt hyperabrupt varactor diode SHELL, DSUB, 25, 90, BLK, POY, S (1011898) SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, variable CAPACITANCE DIODE SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, HYPERABRUPT variable CAPACITANCE DIODE SILICON 28V HYPERABRUPT VARACTOR DIODES UHF BAND, 47 pF, 25 V, SILICON, HYPERABRUPT variable CAPACITANCE DIODE BACKSHL, D-SUB, 9POS, MTL, NIPL, (914794) 22 pF, 25 V, SILICON, HYPERABRUPT variable CAPACITANCE DIODE 28 V, silicon hyperabrupt varactor diode SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
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File Size |
139.25K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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