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sot-227b Datasheet PDF File

For sot-227b Found Datasheets File :: 102 Search Time::2.063ms
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				IXYS Corporation
Part No.	IXGE200N60B04 IXGE200N60B
OCR Text	...ght 19 g features ? conforms to sot-227b outline ? isolation voltage 3000 v~ ? very high current, fast switching igbt ? low v ce(sat) - for minimum on-state conduction losses ? mos gate turn-on - drive simplicity ? low collector-to-case cap...
Description	IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT HiPerFAST IGBT
File Size	518.58K / 2 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXFN44N100Q3
OCR Text	...W C/W (M4 screws (4x) supplied) sot-227b (IXFN) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF =...
Description	HiperFET Power MOSFET Q3-Class
File Size	119.25K / 5 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXFE73N30Q
OCR Text	...ta sheet features ? conforms to sot-227b outline ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-d...
Description	HiPerFET Power MOSFETs Q-Class
File Size	75.17K / 2 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXFN80N50Q3
OCR Text	...W C/W (M4 screws (4x) supplied) sot-227b (IXFN) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF =...
Description	HiperFET Power MOSFET Q3-Class
File Size	120.94K / 5 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXFN210N20P
OCR Text	...W C/W (M4 screws (4x) supplied) sot-227b (IXFN) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 105A, VGS = 0V, Note 1 I...
Description	Polar HiPerFET
File Size	119.26K / 5 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXFN110N60P3
OCR Text	...W C/W (M4 screws (4x) supplied) sot-227b (IXFN) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 100A, VGS = 0V, Note 1 IF...
Description	Polar3 HiPerFET Power MOSFET
File Size	120.26K / 5 Page	View it Online	Download Datasheet

				IXYS, Corp. IXYS[IXYS Corporation]
Part No.	IXFE48N50QD3 IXFE44N50QD2 IXFE44N50QD3 IXFE48N50QD2 IXFE-44N50QD2 IXFE-44N50QD3 IXFE-48N50QD2 IXFE-48N50QD3
OCR Text	...ircuit topologies * Conforms to sot-227b outline * Isolation voltage 3000 V~ * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Low drain-to-case capacitance (<60 pF) - reduced RFI * Ultra-fast FRED diode with soft re...
Description	Buck & Boost Configurations for PFC & Motor Control Circuits 39 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET Buck & Boost Configurations for PFC & Motor Control Circuits Discrete MOSFETs: HiPerFET Power MOSFETS MOSFET Modules
File Size	537.03K / 2 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXFN102N30P
OCR Text	... g sot-227b 30 g g = gate d = drain s = source tab = drain ds99221a(02/05) symbol test conditio...
Description	Polar MOSFETs
File Size	136.78K / 5 Page	View it Online	Download Datasheet

				http:// IXYS[IXYS Corporation]
Part No.	IXFE36N100 IXFE34N100
OCR Text	...W C C C C V~ V~ Conforms to sot-227b outline Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier Applications * DC-DC co...
Description	HiPerFET-TM Power MOSFET
File Size	423.71K / 2 Page	View it Online	Download Datasheet

				ON Semi Motorola, Inc
Part No.	MTE30N50E ON2533 MTE30N50E_D
OCR Text	...= 0.150 OHM (R) 4 1 2 3 G sot-227b S 1. 2. 3. 4. Source Gate Drain Source 2 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 M) Gate-to-Source Voltage -- Continuous ...
Description	N?Channel Enhancement?Mode Silicon Gate From old datasheet system TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM
File Size	228.81K / 8 Page	View it Online	Download Datasheet

For sot-227b Found Datasheets File :: 102 Search Time::2.063ms
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