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SGS Thomson Microelectronics
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| Part No. |
AN484
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| OCR Text |
... their peak current capability, ruggedness and simple gate drive requirements. until recently their use was limited to the electrical drive sector, where they were required to be fast like power mosfets and to have low conduction losses lik... |
| Description |
CAR IGNITION WITH IGBTS
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| File Size |
94.04K /
9 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BLF871
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| OCR Text |
...from hf to 1 ghz. the excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. [1] measured [dbc] with delta marker at 4.3 mhz from center frequency. [2] par (of output signal) at 0.... |
| Description |
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| File Size |
126.52K /
18 Page |
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it Online |
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Freescale Semiconductor, Inc
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| Part No. |
MRFE6VP5600HR611 MRFE6VP5600HR5
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| OCR Text |
ruggedness n--channel enhancement--mode lateral mosfets these high ruggedness devices are designed for use in high vswr industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applic... |
| Description |
RF Power Field Effect Transistors
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN
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| File Size |
928.34K /
13 Page |
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it Online |
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Price and Availability
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