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  mil-std-202 Datasheet PDF File

For mil-std-202 Found Datasheets File :: 22987    Search Time::1.422ms    
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    5KP15CA 5KP54CA 5KP40CA 5KP14CA 5KP78CA 5KP90CA 5KP100CA 5KP10CA 5KP110CA 5KP11CA 5KP120CA 5KP12CA 5KP13CA 5KP150CA 5KP1

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DIODES[Diodes Incorporated]
Part No. 5KP15CA 5KP54CA 5KP40CA 5KP14CA 5KP78CA 5KP90CA 5KP100CA 5KP10CA 5KP110CA 5KP11CA 5KP120CA 5KP12CA 5KP13CA 5KP150CA 5KP16CA 5KP17CA 5KP180CA 5KP18CA 5KP20CA 5KP22CA 5KP240CA 5KP24CA 5KP26CA 5KP28CA 5KP30CA 5KP33CA 5KP36CA 5KP43CA 5KP45CA 5KP48CA 5KP50CA 5KP50CAS 5KP51CA 5KP58CA 5KP60CA 5KP64CA 5KP65CA 5KP70CA 5KP75CA 5KP80CA 5KP85CA
OCR Text ...Epoxy Terminals: Solderable per mil-std-202, Method 208 Polarity Indicator: Cathode Band (Note: Bi-directional devices have no polarity indicator.) Marking: Type Number Weight: 2.1 grams (approx.) All Dimensions in mm "S" Suffix Designat...
Description    5000W TRANSIENT VOLTAGE SUPPRESSOR

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    APT5010B2LL APT5010LLL

ADPOW[Advanced Power Technology]
Part No. APT5010B2LL APT5010LLL
OCR Text ... MAX UNIT C/W 0.25 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.70mH, R = 25W, Peak I = 46A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cyc...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 55.78K  /  2 Page

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    APT5010B2VFR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT5010B2VFR
OCR Text ... < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.26mH, R = 25, Peak I = 47A j G L 5 These dimensions are equal to the TO-247 without mounting hole 6 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C,...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
TERM BLOCK 10MM VERT 3POS PCB 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 64.50K  /  4 Page

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    APT5010B2VR APT5010B2VRG

ADPOW[Advanced Power Technology]
Advanced Power Technolo...
Part No. APT5010B2VR APT5010B2VRG
OCR Text ...380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.26mH, R = 25, Peak I = 47A j G L 5 These dimensions are equal to the TO-247AD without mounting hole APT Reserves the right to change, without notice, the ...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
New T-MAX?Package (Clip-mounted TO-247 Package)

File Size 61.66K  /  4 Page

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    APT5010B2 APT5010B2FLL APT5010LFLL

ADPOW[Advanced Power Technology]
Part No. APT5010B2 APT5010B2FLL APT5010LFLL
OCR Text ... MAX UNIT C/W 0.25 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.70mH, R = 25W, Peak I = 46A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cyc...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 54.02K  /  2 Page

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    APT5010JFLL

ADPOW[Advanced Power Technology]
Part No. APT5010JFLL
OCR Text ... MAX UNIT C/W 0.28 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.86mH, R = 25W, Peak I = 44A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cyc...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 53.49K  /  2 Page

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    APT5010JLC

Advanced Power Technology Ltd.
Part No. APT5010JLC
OCR Text ... MAX UNIT C/W 0.28 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.58mH, R = 25W, Peak I = 44A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cyc...
Description POWER MOS VI 500V 44A 0.100 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.93K  /  2 Page

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    APT5010JLL

ADPOW[Advanced Power Technology]
Part No. APT5010JLL
OCR Text ... MAX UNIT C/W 0.28 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.86mH, R = 25W, Peak I = 44A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cyc...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 51.35K  /  2 Page

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    APT5010JVFR

ADPOW[Advanced Power Technology]
Part No. APT5010JVFR
OCR Text ...380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.58mH, R = 25, Peak I = 44A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt VR = 200V APT Reserves the right to change, withou...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 73.63K  /  4 Page

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    APT5010JVR

Advanced Power Technolo...
Advanced Power Technology, Ltd.
Part No. APT5010JVR
OCR Text ...380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.58mH, R = 25, Peak I = 44A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. 0.3 , THERMAL I...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 71.26K  /  4 Page

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For mil-std-202 Found Datasheets File :: 22987    Search Time::1.422ms    
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