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For ll a Found Datasheets File :: 12151 Search Time::2ms
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				CYPRESS[Cypress Semiconductor] Cypress Semiconductor Corp. SRAM
Part No.	CY62136CV CY62136Vll-55ZSI CY62136Vll-70ZSE CY62136Vll-70ZSI CY62136VSL-70ZSI CY62136VSL-55ZSI CY62136CVll-70BaI
OCR Text	... f = fMaX VCC = 3.6V Industrial(ll) CE > VCC-0.3V VIN > VCC-0.3V or Industrial(SL) VIN < 0.3V, f = 0 automotive 1 1 Industrial automotive Ou...a a a a ma ma ma a Max. Min. Typ.[2] Max. Unit Output LOW Voltage IOL = 2.1 ma Input HIGH Voltage...
Description	2-Mbit (128K x 16) Static RaM 2兆位28K的16）静态RaM
File Size	170.23K / 11 Page	View it Online	Download Datasheet

				IDT[Integrated Device Technology]
Part No.	IDT70T651 IDT70T651S10BC IDT70T651S10BCI IDT70T651S10BF IDT70T651S10BFI IDT70T651S10DR IDT70T651S10DRI IDT70T651S12BC IDT70T651S12BCI IDT70T651S12BF IDT70T651S12BFI IDT70T651S12DR IDT70T651S12DRI IDT70T651S15BC IDT70T651S15BCI IDT70T651S15BF IDT70T651S15BFI IDT70T651S15DR IDT70T651S15DRI IDT70T651S8BC IDT70T651S8BCI IDT70T651S8BF IDT70T651S8BFI IDT70T651S8DR IDT70T651S8DRI IDT70T659S12BCI IDT70T659S12BC IDT70T659S8DRI IDT70T659S8DR IDT70T659S IDT70T659S10BC IDT70T659S10BCI IDT70T659S10BF IDT70T659S10BFI IDT70T659S10DR IDT70T659S10DRI IDT70T659S12BF IDT70T659S12BFI IDT70T659S12DR IDT70T659S12DRI IDT70T659S15BC IDT70T659S15BCI IDT70T659S15BF IDT70T659S15BFI IDT70T659S15DR IDT70T659S15DRI IDT70T659S8BC IDT70T659S8BCI IDT70T659S8BF IDT70T659S8BFI
OCR Text	...0R R/WL CE0L CE1L BB EE 01 ll BB EE 23 ll BBBB EEEE 3210 R RRR R/WR CE0R CE1R OEL Dout0-8_L Dout0-8_R Dout9-17_L Dout9-17_R Dou...a NC for IDT70T659. 2. BUSY is an input as a Slave (M/S=VIL) and an output when it is a Master (M/S=...
Description	HIGH-SPEED 2.5V 256/128K x 36 aSYNCHRONOUS DUaL-PORT STaTIC RaM WITH 3.3V 0R 2.5V INTERFaCE
File Size	340.48K / 27 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRLW1520a IRLW_I520a IRLW/I520a
OCR Text	...ing Test Circuit & Waveforms ll VDS Vary tp to obtain required peak ID BVDSS 1 EaS = ---- ll IaS2 -------------------2 BVDSS -- VDD B...a critical component is any component of a life support device or system whose failure to perform ca...
Description	advanced Power MOSFET
File Size	231.40K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier] FAIRCHILD[Fairchild Semiconductor]
Part No.	IRLW630a IRLI630a IRLI630
OCR Text	...ing Test Circuit & Waveforms ll VDS Vary tp to obtain required peak ID BVDSS 1 EaS = ---- ll IaS2 -------------------2 BVDSS -- VDD B...a critical component is any component of a life support device or system whose failure to perform ca...
Description	N-CHaNNEL MOSFET From old datasheet system aDVaNCED POWER MOSFET
File Size	223.49K / 7 Page	View it Online	Download Datasheet

				http:// Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K6X4008C1F K6X4008C1F-B K6X4008C1F-BB55 K6X4008C1F-BB70 K6X4008C1F-BF55 K6X4008C1F-BF70 K6X4008C1F-DB55 K6X4008C1F-DB70 K6X4008C1F-DF55 K6X4008C1F-DF70 K6X4008C1F-F K6X4008C1F-GB55 K6X4008C1F-GB70 K6X4008C1F-GF55 K6X4008C1F-GF70 K6X4008C1F-GQ55 K6X4008C1F-GQ70 K6X4008C1F-MB55 K6X4008C1F-MB70 K6X4008C1F-MF55 K6X4008C1F-MF70 K6X4008C1F-Q K6X4008C1F-VB55 K6X4008C1F-VB70 K6X4008C1F-VF55 K6X4008C1F-VF70 K6X4008C1F-VQ55 K6X4008C1F-VQ70
OCR Text	...VQ70 Function 32-DIP, 55ns, ll 32-DIP, 70ns, ll 32-SOP, 55ns, ll 32-SOP, 70ns, ll 32-SOP, 55ns, ll 32-SOP, 70ns, ll 32-TSOP2-F, 55ns, ll...a a ma ma ma V V ma a a IOL=2.1ma IOH=-1.0ma CS=VIH, Other inputs = VIL or VIH CSVcc-0.2V, Other ...
Description	48 RECP WIRE SPLICE BLUE PTSE CON 20 SKT (16-20) Circular Connector; Body Material:Composite; Series:RaDSOK; No. of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Receptacle; Gender:Receptacle; Wire Size (aWG):6-4 RoHS Compliant: Yes 97-3102a18-1S Circular Connector; Body Material:Composite; Series:RaDSOK; Number of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Receptacle; Connector Type:Circular; Gender:Receptacle; Wire Size (aWG):10-8 Circular Connector; Body Material:Composite; Series:RaDSOK; No. of Contacts:5; Connecting Termination:Wire; Circular Shell Style:Cable Receptacle; Gender:Receptacle; Wire Size (aWG):10-8 RoHS Compliant: Yes 512Kx8 bit Low Power full CMOS Static RaM 512Kx8位充分的CMOS低功耗静态存储器 PTSE CON 20 SKT (16-20) 512Kx8位充分的CMOS低功耗静态存储器
File Size	175.91K / 9 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6X4008T1F K6X4008T1F-B K6X4008T1F-F K6X4008T1F-GB55 K6X4008T1F-GB70 K6X4008T1F-GB85 K6X4008T1F-GF55 K6X4008T1F-GF70 K6X4008T1F-GF85 K6X4008T1F-GQ70 K6X4008T1F-GQ85 K6X4008T1F-MB55 K6X4008T1F-MB70 K6X4008T1F-MB85 K6X4008T1F-MF55 K6X4008T1F-MF70 K6X4008T1F-MF85 K6X4008T1F-Q K6X4008T1F-VB55 K6X4008T1F-VB70 K6X4008T1F-VB85 K6X4008T1F-VF55 K6X4008T1F-VF70 K6X4008T1F-VF85 K6X4008T1F-VQ70 K6X4008T1F-VQ85 K6X4008T1F-YB55 K6X4008T1F-YB70 K6X4008T1F-YB85 K6X4008T1F-YF55 K6X4008T1F-YF70 K6X4008T1F-YF85 K6X4008T1F-YQ70 K6X4008T1F-YQ85
OCR Text	...VQ85 Function 32-SOP, 55ns, ll 32-SOP, 70ns, ll 32-SOP, 85ns, ll 32-sTSOP1-F, 55ns, ll 32-sTSOP1-F, 70ns, ll 32-sTSOP1-F, 85ns, ll 32-TS...a a ma ma ma V V ma a a a Cycle time=Min, 100% duty, IIO=0ma, CS=VIL, VIN=VIH or VIL IOL=2.1ma...
Description	Circular Connector; MIL SPEC:MIL-C-5015; Body Material:aluminum; Series:165; Number of Contacts:12; Connecting Termination:Solder; Circular Shell Style:Cable Plug; Circular Contact Gender:Socket; Current Rating:7.5a 512Kx8位低功耗和低电压的CMOS静态RaM PT05SE18-32S 512Kx8位低功耗和低电压的CMOS静态RaM 512Kx8 bit Low Power and Low Voltage CMOS Static RaM 512Kx8位低功耗和低电压的CMOS静态RaM D38999/26Wa98SN
File Size	172.78K / 9 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MJW18020 JW18020 MJW18020-D
OCR Text	...COllECTOR MJW18020= Device Code ll = Location Code Y = Year WW = Work Week THERMaL CHaRaCTERISTICS Characteristic Thermal Resistance, Ju...a) IC, COllECTOR CURRENT (a) Figure 1. DC Current Gain, VCE = 2.0 V 100.0 Ic/Ib = 5.0 VCE, VO...
Description	NPN Silicon Power Transistors High Voltage Planar 30a 1000 Volts BVces 450 Volts BVceo 250 Watts
File Size	55.68K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MJW21193 MJW21194 MJW21193-D
OCR Text	...W2119x = Device Code x = 3 or 4 ll = Location Code Y = Year WW = Work Week ORDERING INFORMaTION Device MJW21193 MJW21194 Package TO-247 ...a/5 V) Current Gain Bandwidth Product (IC = 1 adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (...
Description	Silicon Power Transistors
File Size	75.55K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MJW21195 MJW21196 MJW21195-D
OCR Text	...W2119x = Device Code x = 5 or 6 ll = Location Code Y = Year WW = Work Week ORDERING INFORMaTION Device MJW21195 MJW21196 Package TO-247 ...a/5 V) Current Gain Bandwidth Product (IC = 1 adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (...
Description	Silicon Power Transistors (NPN) Silicon Power Transistors (PNP)
File Size	92.02K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MJW3281a MJW1302a MJW3281a-D
OCR Text	...Device Code xxxx = 3281 OR 1302 ll = Location Code Y = Year WW = Work Week 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. ORDERI...a) 35 30 25 20 15 10 5.0 0 0 TJ = 25C 5.0 10 15 20 VCE, COllECTOR-EMITTER VOLTaGE (VOLTS) 25 1.5 a I...
Description	Complementary NPN-PNP Silicon Power Bipolar Transistors
File Size	91.87K / 8 Page	View it Online	Download Datasheet

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