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  ldmos packages Datasheet PDF File

For ldmos packages Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    BAT721 1PS76SB21 1PS76SB21-15-15 BAT721C BAT721S BAT721A

NXP Semiconductors
Part No. BAT721 1PS76SB21 1PS76SB21-15-15 BAT721C BAT721S BAT721A
Description Planar Schottky barrier diodes with an integrated guard ring for stress protection. Encapsulated in small Surface-Mounted Device (SMD) plastic packages.
Schottky barrier diodes in small packages

File Size 67.25K  /  11 Page

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    BLF6G22-45

NXP Semiconductors N.V.
Part No. BLF6G22-45
Description Power ldmos transistor
Product description45 W ldmos power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

File Size 62.81K  /  10 Page

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    NXP Semiconductors N.V.
Part No. BLF7G22LS-100P
Description Power ldmos transistor
100 W ldmos power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

File Size 671.16K  /  14 Page

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    NXP Semiconductors N.V.
Part No. BLF7G27LS-100 BLF7G27L-100
Description Power ldmos transistor
100 W ldmos power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

File Size 144.04K  /  14 Page

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    MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1

Freescale (Motorola)
MOTOROLA[Motorola, Inc]
Part No. MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1
Description GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF ldmos Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF ldmos Wideband Integrated Power Amplifiers
RF ldmos Wideband Integrated Power Amplifiers

File Size 579.33K  /  12 Page

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    0805 1008 T491X226K035AS 100B100JCA500X 100B120JP500X 100B2R7CP500X 100B3R3CP500X 100B430JP500X 100B4R7CP500X 27271SL 60

Freescale Semiconductor, In...
FREESCALE[Freescale Semiconductor, Inc]
Motorola
Part No. 0805 1008 T491X226K035AS 100B100JCA500X 100B120JP500X 100B2R7CP500X 100B3R3CP500X 100B430JP500X 100B4R7CP500X 27271SL 600S100JW C1210C104K5RACTR CRCW12061001F100 CRCW12061021F100 CRCW120620R0F100 MW4IC001MR4 MW4IC001NR4
Description RF ldmos Wideband Integrated Power Amplifiers
MW4IC001MR4 W-CDMA 0.8-2.17 GHz, 900 mW, 28 V RF ldmos Wideband Integrated Power Amplifier

File Size 590.63K  /  16 Page

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    NXP Semiconductors N.V.
Part No. BLF6G27LS-40P BLF6G27L-40P
Description 40 W ldmos power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power ldmos transistor

File Size 155.61K  /  14 Page

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    NXP Semiconductors N.V.
Part No. BLF7G27L-90P BLF7G27LS-90P
Description 90 W ldmos power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power ldmos transistor

File Size 951.03K  /  14 Page

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    NXP Semiconductors N.V.
Part No. BLF6G22L-40BN
Description 40 W ldmos power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power ldmos transistor

File Size 143.28K  /  13 Page

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    0809LD60P

Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
Part No. 0809LD60P
Description Compant High-Insulation Power Relay, Polarized, 10A 60瓦,28V的,1 GHz的ldmos的场效应
60 Watt / 28V / 1 Ghz ldmos FET
60 WATT, 28V, 1 GHz ldmos FET

File Size 15.64K  /  1 Page

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