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SGS Thomson Microelectronics
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Part No. |
AN509
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OCR Text |
...ncrease (see fig. 7). 2. mosfet/igbt voltage driven devices have gained great popularity because of the high impedance of their input; a mosfet gate that requires a minimum of only 8 volts and microjoules of energy to switch on and off. the... |
Description |
INFLUENCE OF GATE AND BASE DRIVE ON POWER SWITCH BEHAVIOUR
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File Size |
81.25K /
11 Page |
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it Online |
Download Datasheet |
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SENSITRON[Sensitron]
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Part No. |
SPM6M020-060D
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OCR Text |
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ELECTRICAL CHARACTERISTICS PER igbt DEVICE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT
PARAMETER mosfet SPECIFICATIONS Drain to Source Breakdown Voltage IC = 250 A, VGS = 0V Continuous Drain Current Pulsed Drain Curr... |
Description |
Three-Phase mosfet BRIDGE With Gate Driver and Optical Isolation 600 VOLT 20 AMP
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File Size |
176.32K /
13 Page |
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it Online |
Download Datasheet |
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Price and Availability
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