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e-amps adc. Datasheet PDF File

For e-amps adc. Found Datasheets File :: 3095 Search Time::1.969ms
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				ONSEMI[ON Semiconductor]
Part No.	MJW18020 JW18020 MJW18020-D
OCR Text	...) M -Q- TBM U A 1 -T- E -B- L R 2 3 DIM A B C D E F G H J K L P Q R U V C 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 19.7 20.3 15.3 15.9 4.7 ...
Description	NPN Silicon Power Transistors High Voltage Planar 30A 1000 Volts BVces 450 Volts BVceo 250 Watts
File Size	55.68K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor] MOTOROLA[Motorola, Inc]
Part No.	MJW21191 MJW21192 ON2061
OCR Text	...erved for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figure...AMPS) IC , COLLECTOR CURRENT (AMPS) 10 ms 100 ms 10 250 ms 100 PNP -- MJW21191 10 ms 100 ms 10...
Description	8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 150 VOLTS 100 WATTS From old datasheet system
File Size	148.32K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MJW21193 MJW21194 MJW21193-D
OCR Text	...erved for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 150C; TC is variable depending on conditions. At high case temperatures, th...
Description	Silicon Power Transistors
File Size	75.55K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MJW21195 MJW21196 MJW21195-D
OCR Text	...erved for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure...AMPS) IC, COLLECTOR CURRENT (AMPS) 100 100 NPN MJW21196 10 ms 10 1 Sec 1 100 ms 10 ms 10 1 ...
Description	Silicon Power Transistors (NPN) Silicon Power Transistors (PNP)
File Size	92.02K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MJW3281A MJW1302A MJW3281A-D
OCR Text	...erved for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 13 and 14 is based on TJ(pk) = 150C; TC is variable depending on conditions. At high case temperat...
Description	Complementary NPN-PNP Silicon Power Bipolar Transistors
File Size	91.87K / 8 Page	View it Online	Download Datasheet

				Motorola Inc MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
Part No.	BUL146 ON0244
OCR Text	...erved for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on T C = 25C; T J(pk) is variable depending on power level. Second breakdown pulse limi...
Description	From old datasheet system POWER TRANSISTOR 6.0 AMPERES 700 VOLTS 40 and 100 WATTS
File Size	388.76K / 10 Page	View it Online	Download Datasheet

				Motorola Inc MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
Part No.	BUL147 BUL147F ON0245
OCR Text	...erved for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits...
Description	From old datasheet system POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS
File Size	376.14K / 10 Page	View it Online	Download Datasheet

				ETC Motorola, Inc ON Semiconductor
Part No.	MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E
OCR Text	E-FET.TM Power Field Effect Transistor D3PAK for Surface Mount This high voltage MOSFET uses an advanced termination scheme to provide enha...AMPS) 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 4V 9 10 5V TJ = 25C VGS = 10 V 9V 7V 6V I D , DRAIN CU...
Description	16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
File Size	275.97K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	VN2222LL VN2222LL_D ON3010
OCR Text	...22LL 2 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 1 2 3 4 5 6 7 8 9 7V 6V 5V 4V 3V 10 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN- SOURCE VOLTAGE (VOLTS) VGS, GATE - SOURCE VOLTAGE (VOLTS) TA = 25C I D, DRAIN CURRENT (AMPS) VGS = ...
Description	From old datasheet system N-hannel Enhancement TMOS FET Transistor
File Size	67.33K / 4 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MTP10N10EL ON2537
OCR Text	E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high ...AMPS) TJ = 25C VGS = 10 V 7V 5V ID , DRAIN CURRENT (AMPS) 4.5 V 15 4V 10 3.5 V 5 15 25C 10 TJ = 100C...
Description	From old datasheet system TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS
File Size	221.09K / 8 Page	View it Online	Download Datasheet

For e-amps adc. Found Datasheets File :: 3095 Search Time::1.969ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |