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  drain-source Datasheet PDF File

For drain-source Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MITEL[Mitel Networks Corporation]
Mitel Semiconductor
Part No. SP8910 SP8910KGMP1T SP8910KG SP8910KGMP1S
Description 5GHZ ±10 Fixed Modulus Divider
5GHZ 10 Fixed Modulus Divider
5GHZ ÷10 Fixed Modulus Divider(5GHZ ÷10超高速低功耗固定模数除法器)
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:30A; On-Resistance, Rds(on):0.028ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No

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    Hitachi,Ltd.
Sanyo Denki Co., Ltd.
ZF Electronics, Corp.
Part No. AI3D5 AI3D9 AI3D7 AI3D8 AI3D6 AM2D8 AM2D55J FAM2D5 FAM2D12G FAM2D15J AI3D13G AI4D7 AI4D8 AI4D5 AI4D6 AI4D9 AM2D10 AM2D14G FAM2D75J FAI3D75J FAI4D75J AM3D75J AI4D9J AI3D9J AM2D9J AM3D9J FAM2D4 FAM2D6 FAM3D45J FAM3D55 FAM3D50J FAM3D45G AI4D60 FAM2D9 FAM3D8 FAM2D13 FAM2D14 FAM2D16 FAM3D6G FAM3D6J FAM2D9J AI4D6J AI4D16J FAI4D16J FAI4D6J FAM3D35J AM2D50G AM2D50J AM2D5G AM2D55G AM3D55G AI3D5G FAM3D55J AI3D55G FAM2D35J AI4D5G AI4D55G FAM3D15J FAM3D5J FAM2D9G FAM2D8G FAM2D8J FAM2D80G FAM2D80J AI3D40 AI3D40G AI4D45G AI3D45G AI4D40G AI3D40J AI3D45J AI4D40J FAI4D6G FAM2D60J FAI3D60G AM3D10J AI4D25J AI3D20G AM3D11J FAM3D35G
Description 8 MINI MAP,PB/HALO FREE,NIPDAU LF,1.8V(SERIAL EE)
8 ULTRA THIN MINI MAP,PB/HALO FREE,1.8V(SERIAL EE)
Discrete IGBTs; Surface Mount Type: N; Package: TO-3P(LH); Number Of Pins: 3; No Of Circuits: 1; Comments: High-rugged type; V_CES (V): (max 1200)
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: SMQ; XJE016 JEITA: SC-61; Number of Pins: 4; Features: standard; Internal
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: SMQ; XJE016 JEITA: SC-61; Number of Pins: 4; Features: low VF; Internal
10MS, 8 EIAJ, IND TEMP, GREEN, 1.8V(SERIAL EE)
Stepping Motor Driver ICs; Function: Driver; Vopmax (Vm*): 34V (40V); Io (lpeak): 1.5A (1.8A); Excitation: 1/16 step; I/F: CLK input; Mixed Decay Mode: included; Package: HSOP36; RoHS Compatible: yes
250NS,32LCC,883C; LEV B FULLY COMPLIANT(EEPROM)
Discrete IGBTs; Surface Mount Type: N; Package: TO-3P(N); Number Of Pins: 3; No Of Circuits: 2; Comments: High-rugged type; V_CES (V): (max 600)
Discrete IGBTs; Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; No Of Circuits: 2; Comments: High-rugged type; V_CES (V): (max 600)
Discrete IGBTs; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; No Of Circuits: New product; Comments: 2.9; V_CES (V): (max 400)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; V th (V): (min -0.6) (max -1.1); R DS
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; V th (V): (min 0.5) (max 1.2); R DS
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; V th (V): (min 1.1) (max 1.8); R DS
Dual/Quad Zero-Drift Operational Amplifiers; Package: SSOP; No of Pins: 16; Temperature Range: -40° to 125°C
10MS, DIE, 1.8V, 11 MILS THICKNESS(SERIAL EE)
General Purpose Transistors (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: High current; Part
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Features: high breakdown
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Features: low VF; Internal
General Purpose Transistors (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: Low-noise; Part
General Purpose Transistors (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: High voltage SW; Part
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: USM; XJE016 JEITA: SC-70; Number of Pins: 3; V th (V): (min 0.8) (max 2.5); R DS On (Ω): 20 (max 50); drain-source Voltage (V): (max 50); Drain Current (mA): (max 50)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: SSM; XJE016 JEITA: SC-75; Number of Pins: 3; V th (V): (min 0.6) (max 1.1); R DS On (Ω): 5.2 (max 15); drain-source Voltage (V): (max 20); Drain Current (mA): (max 100)
10MS, 8 TSSOP, EXT TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 TSSOP, IND TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 PDIP, IND TEMP, GREEN, 2.7V(SERIAL EE)
DIE/WAFER FORM(EEPROM)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: ES6; Number of Pins: 6; V th (V): (min 0.5) (max 1.1); R DS On (Ω): 0.140 (max 0.180) 0.120 (max 0.145); drain-source Voltage (V): (max 30); Drain Current (mA): (max 500)
High-Frequency Schottky Barrier Diodes; Surface Mount Type: Y; Package: VESM; Number Of Pins: 3; Application Scope: VHF, UHF MIX; V F (V): 0.25; C T (pF): 0.6; V R (V): (max 4); Average Forward Current I_F Max (mA): (max 25)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: TESM; Number of Pins: 3; V th (V): (min -0.6) (max -1.1); R DS On (Ω): 18 (max 45); drain-source Voltage (V): (max -20); Drain Current (mA): (max -100)
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: UF6; Number of Pins: 6; V th (V): (min 0.8) (max 2); R DS On (Ω): 0.33 (max 0.44) 0.23 (max 0.3); drain-source Voltage (V): (max 60); Drain Current (mA): (max 2000)
Small-Signal MOS FETs(Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; V th (V): (min 0.8) (max 2.5); R DS On (Ω): 20 (max 50); drain-source Voltage (V): (max 50); Drain Current (mA): (max 50)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: USM; XJE016 JEITA: SC-70; Number of Pins: 3; V th (V): (min -0.8) (max -2.5); R DS On (Ω): 20 (max 50); drain-source Voltage (V): (max -50); Drain Current (mA): (max -50)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: SSM; XJE016 JEITA: SC-75; Number of Pins: 3; V th (V): (min -0.5) (max -1.5); R DS On (Ω): 20 (max 40); drain-source Voltage (V): (max -20); Drain Current (mA): (max -50)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; V th (V): (min 2) (max 3.5); R DS On (Ω): 0.6 (max 1); drain-source Voltage (V): (max 60); Drain Current (mA): (max 200)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; V th (V): (min -0.5) (max -1.5); R DS On (Ω): 2.4 (max 4); drain-source Voltage (V): (max -30); Drain Current (mA): (max -200)
Small-Signal MOS FETs(Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; V th (V): (min -0.8) (max -2.5); R DS On (Ω): 20 (max 50); drain-source Voltage (V): (max -50); Drain Current (mA): (max -50)
Small-Signal MOS FETs(Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; V th (V): (min -2) (max -3.5); R DS On (Ω): 1.3 (max 2); drain-source Voltage (V): (max -60); Drain Current (mA): (max -200)
10MS, 8 PDIP, IND TEMP, GREEN, 1.8V(SERIAL EE)
Logic IC 逻辑IC
Discrete IGBTs; Surface Mount Type: N; Package: TO-3P(LH); Number Of Pins: 3; No Of Circuits: 2; Comments: Non isolation package; V_CES (V): (max 900) 逻辑IC
90NS, VSOP, IND TEMP(EPROM) 逻辑IC
Dual -48V Supply and Fuse Monitor; Package: SO; No of Pins: 8; Temperature Range: 0&deg;C to 70&deg;C 逻辑IC
45NS, SOIC, IND TEMP(EPROM) 逻辑IC
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: TESM; Number of Pins: 3; V th (V): (min 0.8) (max 1.5); R DS On (&#206;&#169;): 4 (max 7); drain-source Voltage (V): (max 30); Drain Current (mA): (max 100) 逻辑IC

File Size 81.95K  /  1 Page

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    24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. 24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST24C16B1TR ST24C16B3TR ST24C16B5TR ST24C16B6TR ST24C16M1TR ST24C16M3TR ST24C16M5TR ST24C16M6TR ST24W16 ST24W16B1TR ST24W16B3TR ST24W16B5TR ST24W16B6TR ST24W16M1TR ST24W16M3TR ST24W16M5TR ST24W16M6TR ST25W16 ST25W16B1TR ST25W16B3TR ST25W16B5TR ST25W16B6TR ST25W16M1TR ST25W16M3TR ST25W16M5TR ST25W16M6TR
Description MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM

File Size 125.39K  /  17 Page

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    Inchange Semiconductor ...
Part No. IRF242
Description    Static drain-source On-Resistance

File Size 42.72K  /  2 Page

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    Inchange Semiconductor ...
Part No. IRF245
Description    Static drain-source On-Resistance

File Size 42.74K  /  2 Page

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    Inchange Semiconductor ...
Part No. 18N65
Description    Static drain-source On-Resistance

File Size 41.38K  /  2 Page

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Part No. PT7A7515 PT7A7513 PT7A7535 PT7A7531
Description MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:67A; On-Resistance, Rds(on):7.9mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:D2PAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No
3.08V Reset Active Low Supervisor
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 55.21K  /  12 Page

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    TY Semiconductor Co., Ltd
Part No. KE3587-G
Description N-channel:VDS=20V ID=4A drain-source Voltage Vds 20V

File Size 211.41K  /  2 Page

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    Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. AN79M52F AN79M00 AN79M00F AN79M05 AN79M05F AN79M06 AN79M06F AN79M07 AN79M07F AN79M08 AN79M08F AN79M09 AN79M09F AN79M10 AN79M10F AN79M12 AN79M12F AN79M15 AN79M15F AN79M18 AN79M18F AN79M20 AN79M20F AN79M24 AN79M24F AN79M52
Description 3-pin Negative Output Voltage Regulators 500mA Type 7 V FIXED NEGATIVE REGULATOR, PSFM3
3-pin Negative Output Voltage Regulators 500mA Type 8 V FIXED NEGATIVE REGULATOR, PSFM3
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:60A; On-Resistance, Rds(on):0.0175ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:5-D2-PAK; Leaded Process Compatible:No RoHS Compliant: No

File Size 69.03K  /  9 Page

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    AP1623SLA AP1623 AP1623S AP1623SA AP1623SL

ETC
ANACHIP[Anachip Corp]
Part No. AP1623SLA AP1623 AP1623S AP1623SA AP1623SL
Description Diodes, Zener; Zener Voltage Typ, Vz:12V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:41-MiniDIP; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Peak Reflow Compatible (260 C):Yes
JFET; Transistor Polarity:Dual N Channel; Breakdown Voltage, V(br)gss:-40V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:10mA; Gate-Source Cutoff Voltage Max, Vgs(off):-2.5V
PWM Control Step-Down Switching Regulator-Converter

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