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TOSHIBA
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| Part No. |
TD62503F TD62506P TD62506F TD62504P
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| OCR Text |
... p 1.0 power dissipation f p d 0.625 (note 4) w operating temperature t opr ? 40~85 c storage temperature t stg ? 55~150 c note 1: td62506p / f note 2: td62502p / f, td62503p / f, td62504p / f note 3: td62501p / f, td62505... |
| Description |
7CH SINGLE DRIVER
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| File Size |
251.89K /
10 Page |
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it Online |
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TOSHIBA
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| Part No. |
TD62503FN
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| OCR Text |
... 0.5~30 v power dissipation p d (note 1) 0.78 w operating temperature t opr ? 40~85 c storage temperature t stg ? 55~150 c note 1: on glass epoxy pcb (50 50 1.6 mm, cu 40%) recommended operating conditions (ta = ? 40 ~... |
| Description |
7CH SINGLE DRIVER: COMMON EMITTER
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| File Size |
176.84K /
6 Page |
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EGmicro
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| Part No. |
EG2809
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| OCR Text |
... +/ - 100ma g n d v d d l e d 1 l e d 2 l e d 3 e g 2 8 0 9 1 2 3 4 5 6 7 8 o p t 1 o p t 2 l e d 4
???? ...mos ? 5 7 8 l e d 1 6 1 3 2 4 v d d g n d ? ? ? ? ? ? l e d 2 l e d 3 l e d 4 o p... |
| Description |
Flashlight control four single chip
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| File Size |
592.71K /
11 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BLF245
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| OCR Text |
d a t a sh eet product speci?cation supersedes data of 1997 dec 17 2003 sep 02 discrete semiconductors blf245 vhf power mos transistor m3d065
2003 sep 02 2 philips semiconductors product speci?cation vhf power mos transistor blf245 featu... |
| Description |
VHF power MOS transistor BLF245<SOT123A (CRFM4)|<<http://www.nxp.com/packages/SOT123A.html<1<Always Pb-free,;
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| File Size |
97.32K /
16 Page |
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it Online |
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Advanced Power Technology, Ltd.
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| Part No. |
APT6015JFVR
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| OCR Text |
...eakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-s...mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new tech... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
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| File Size |
57.89K /
4 Page |
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it Online |
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Panasonic
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| Part No. |
2SK2375
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| OCR Text |
...fs | v dsf c iss c oss c rss t d(on) t r t f t d(off) r th(ch-c) r th(ch-a) conditions v ds = 720v, v gs = 0 v gs = 30v, v ds = 0 i d ...mos fets 2sk2375 area of safe operation (aso) p d ? ta i d ? v gs v th ? t c v ds ? v gs... |
| Description |
Power Device - Power MOS FETs
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| File Size |
78.44K /
3 Page |
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Microsemi, Corp.
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| Part No. |
APT40M70B2VFRG APT40M70LVFRG
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| OCR Text |
d s b2vfr lvfr 400v 57a 0.070 ? ? ? ? ? apt40m70b2vfr apt40m70lvfr apt40m70b2vfrg* apt40m40lvfrg* * g denotes rohs compliant, pb free terminal finish. power mos v ? is a new generation of high voltage n-channel enhancement mode power... |
| Description |
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-264 [L]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
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| File Size |
141.81K /
4 Page |
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it Online |
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