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Cystech Electonics Corp...
CYSTEKEC[Cystech Electonics Corp.]
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| Part No. |
GURAE83 D44H11FP
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| OCR Text |
...ctor Current---IC(mA)
120
500ua
600 500 400 300 200 100 IB=0uA 0 0 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) 2mA 1.5mA 1mA 500ua
Collector To Emitter Voltage---VCE(V)
D44H11FP
CYStek Product Specification
CYStec... |
| Description |
Low Vcesat NPN Epitaxial Planar Transistor
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| File Size |
173.19K /
4 Page |
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it Online |
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Cystech Electonics Corp...
CYSTEKEC[Cystech Electonics Corp.]
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| Part No. |
D44H11J3
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| OCR Text |
...ctor Current---IC(mA)
120
500ua
600 500 400 300 200 100 IB=0uA 0 0 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) 2mA 1.5mA 1mA 500ua
Collector To Emitter Voltage---VCE(V)
D44H11J3
CYStek Product Specification
CYStec... |
| Description |
Low Vcesat NPN Epitaxial Planar Transistor
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| File Size |
171.01K /
4 Page |
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it Online |
Download Datasheet |
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CYSTEKEC[Cystech Electonics Corp.]
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| Part No. |
BTN3501J3
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| OCR Text |
...Output Characteristics
140 700 500ua 400uA 300uA 200uA 100uA IB=0uA 0 1 2 3 4 5 6
Grounded Emitter Output Characteristics
2.5mA
Collector Current---IC(mA)
Collector Current---IC(mA)
120 100 80 60 40 20 0
600 500 400 300 200... |
| Description |
Low Vcesat NPN Epitaxial Planar Transistor
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| File Size |
160.22K /
4 Page |
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it Online |
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Fairchild Semiconductor, Corp.
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| Part No. |
KSD401YTU
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| OCR Text |
...-base breakdown voltage i c = 500ua, i e = 0 200 v bv ceo collector-emitter breakdown voltage i c = 10ma, i b = 0 150 v bv ebo emitter-base breakdown voltage i e = -500ua, i c = 0 5 v i cbo collector cut-off current v cb ... |
| Description |
NPN Epitaxial Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Rail 2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB
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| File Size |
87.90K /
6 Page |
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it Online |
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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
KSD40104 KSD401 KSD401Y KSD401YTU
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| OCR Text |
...dth Product Test Condition IC = 500ua, IE = 0 IC = 10mA, IB = 0 IE = -500ua, IC = 0 VCB = 150V, IE = 0 VCE = 10V, IC = 0.4A IC = 500mA, IB = 50mA VCE = 10V, IC = 0.4A 5 120 Min. 200 150 5 50 400 1 V MHz Typ. Max. Units V V V A
hFE Classi... |
| Description |
NPN Epitaxial Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Bulk 2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB
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| File Size |
68.73K /
4 Page |
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it Online |
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CYSTEKEC[Cystech Electonics Corp.]
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| Part No. |
BTN3501E3
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| OCR Text |
...Output Characteristics
140 700 500ua 400uA 300uA 200uA 100uA IB=0uA 0 1 2 3 4 5 6
Grounded Emitter Output Characteristics
2.5mA
Collector Current---IC(mA)
Collector Current---IC(mA)
120 100 80 60 40 20 0
600 500 400 300 200... |
| Description |
High Speed Switching diode
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| File Size |
165.06K /
4 Page |
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it Online |
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CYSTEKEC[Cystech Electonics Corp.]
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| Part No. |
BTN1053M3
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| OCR Text |
...250 Collector Current---IC(mA)
500ua
Grounded Emitter Output Characteristics
1200
2.5mA
200 150 100 50 0 0 1 2 3 4
400uA 300uA 200uA 100uA IB=0uA
Collector Current---IC(mA)
1000 800 600 400 200
IB=0uA 2mA 1.5mA 1mA 500ua
... |
| Description |
NPN Epitaxial Planar Transistor
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| File Size |
165.67K /
5 Page |
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it Online |
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Cystech Electonics Corp...
CYSTEKEC[Cystech Electonics Corp.]
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| Part No. |
BTD965LA3
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| OCR Text |
...Output Characteristics
0.3
IB=500ua
Spec. No. : C852A3 Issued Date : 2004.07.02 Revised Date : Page No. : 3/5
Output Characteristics
1.4 1.2 Collector Current---IC(A)
IB=400uA IB=300uA IB=200uA IB=2.5mA IB=2mA IB=1.5mA IB=1mA IB=5... |
| Description |
Low VCE(sat) NPN Planar Transistor
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| File Size |
144.11K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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