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SIEMENS AG
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| Part No. |
HYB39S16160CT-7 HYB39S16160CT-5.5 HYB39S16160CT-6
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| OCR Text |
...t) ? programmable cas latency: 2, 3 ? programmable wrap sequence: sequential or interleave ? programmable burst length: 1, 2, 4, 8 ? full ...7 unit f ckmax @ cl = 3 183 166 143 mhz t ck3 5.567ns t ac3 4.555ns f ckmax @ cl = 2 133 125 115 m... |
| Description |
1M × 16-Mbit Synchronous DRAM for High-Speed Graphics Applications(16M1M × 16)同步动态RAM(用于高速图形场)
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| File Size |
111.85K /
19 Page |
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it Online |
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Mitsubishi Electric Corporation
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| Part No. |
MH32S72BAFA-7 MH32S72BAFA-8
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| OCR Text |
2,415,919,104-bit ( 33,554,432-word by 72-bit ) synchronous dynamic ram mh32s72bafa -7,-8 mitsubishi lsis 29.july.1998 mit-ds-0243-0.0 description application main memory unit for computers, microcomputer memory. features type na... |
| Description |
Circular Connector; No. of Contacts:19; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:15-19 RoHS Compliant: No
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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| File Size |
790.59K /
54 Page |
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it Online |
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Mitsubishi Electric Corporation
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| Part No. |
MH32S72AQJA-7 MH32S72AQJA-8
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| OCR Text |
2,415,919,104 -bit ( 33,554,432-word by 72-bit ) synchronous dynamic ram mh32s72aqja-7, -8 17 /mar./2000 mit-ds-0371-0.2 preliminary spec. some contents are subject to change without notice. mitsubishi lsis mitsubishi electric descripti... |
| Description |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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| File Size |
992.38K /
56 Page |
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it Online |
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Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
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| Part No. |
MH32S64PHB-7 MH32S64PHB-8 MH32S64PHB-10
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| OCR Text |
...ck rising edge burst length- 1/2/4/8/full page(programmable) 4 bank operation controlled by ba0,1(bank address) /cas latency- 2/3(programma...7,-8), spd 1.0(-10)) frequency clk access time -8 100mhz 6.0ns(cl=3) (component sdram) 6.0ns(cl=3) 1... |
| Description |
214683648-BIT (3354432- WORD BY 64-BIT)SynchronousDRAM 214683648位（3354432 -文字4位）SynchronousDRAM
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| File Size |
606.16K /
55 Page |
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it Online |
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Infineon
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| Part No. |
HYS72D32501HR-7-C
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| OCR Text |
... . . . . . . . . . . . . . 6 1.2 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....7 application note . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... |
| Description |
256MB - 2GB, 184pin
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| File Size |
570.49K /
30 Page |
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it Online |
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Diodes Inc.
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| Part No. |
DMN5L06WK-7
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| OCR Text |
2 - 2 1 of 5 dmn5l06wk www.diodes.com diodes incorporated dmn5l06wk n-channel enhancement mode field effect transistor characteristic symb...7.5v forward transconductance |y fs | 200 ms v ds =10v, i d = 0.2a source-drain diode forward vol... |
| Description |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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| File Size |
127.30K /
5 Page |
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it Online |
Download Datasheet |
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Diodes Inc.
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| Part No. |
DMN5L06DWK-7
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| OCR Text |
2 - 2 1 of 5 dmn5l06dwk www.diodes.com diodes incorporated dmn5l06dwk dual n-channel enhancement mode field effect transistor features d...7.5v forward transconductance |y fs | 200 ms v ds =10v, i d = 0.2a source-drain diode forward vol... |
| Description |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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| File Size |
129.00K /
5 Page |
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it Online |
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Diodes Inc.
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| Part No. |
DMN2004WK-7
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| OCR Text |
2 - 2 1 of 4 dmn2004wk www.diodes.com diodes incorporated dmn2004wk n-channel enhancement mode field effect transistor characteristic symb...7 0.55 0.70 0.9 v gs = 4.5v, i d = 540ma v gs = 2.5v, i d = 500ma v gs = 1.8v, i d = 350ma forward... |
| Description |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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| File Size |
135.48K /
4 Page |
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it Online |
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