1- AUGUST 1998 DEVICE DESCRIPTION
The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used...8V 10V
0.2
0.4
0.6
0.8
1.0
Rcal (k)
External Vsub Load (mA)
JFET Drain Curre...
1 - OCTOBER 1998 DEVICE DESCRIPTION
The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly us...8V 10V
0
0.2
0.4
0.6
0.8
1.0
Rcal (k)
External Vsub Load (mA)
JFET Drain ...
Description
Bias Generator with Polarity & Local Osc. Tone Switch. FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION
...external circuits. The ZNBG4000/1 and ZNBG6000/1 contain four and six bias stages respectively. In setting drain current the ZNBG4000/1 two ...8V 10V
0
0.2
0.4
0.6
0.8
1.0
Rcal (k)
External Vsub Load (mA)
JFET Drain ...
Description
FET BIAS CONTROLLER 场效应管偏置控制 ABSOLUTE MAXIMUM RATINGS FET BIAS CONTROLLER SPECIALTY ANALOG CIRCUIT, PDSO20 MS3470L14-15S 场效应管偏置控制
...e soldering techniques.
S
1
8
A D D D D
S
S G
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
...8V -1.5V -1.2V BOTTOM -1.0V TOP
1000
-I D , Drain-to-Source Current (A)
100
-I D , Drain...
Description
Ultra Low On-Resistance -20V Single P-Channel HEXFET Power MOSFET in a SO-8 package
...atsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
S O T -2 2 3
Absolute Maximum Ratings
Parame...8V
16
12
8
100
C rss
4
0 1 10 100
A
0 0 3 6
FO R TE S T C IR C U IT S ...