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  0.4v ms Datasheet PDF File

For 0.4v ms Found Datasheets File :: 15440    Search Time::2.344ms    
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    2SJ466

SANYO[Sanyo Semicon Device]
Part No. 2SJ466
OCR Text ...[2SJ466] 8.2 7.8 6.2 3 8.4 10.0 0.4 0.2 0.6 4.2 1.2 1.0 2.54 1 2 1.0 2.54 6.2 5.2 0.3 0.6 7.8 5.08 10.0 6.0 2...4V -1.0 16 27 20 30 30 40 Conditions Ratings min -30 20 -100 10 -2.0 typ max Unit V V A A V S m m ...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 38.71K  /  4 Page

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    2SJ483

HITACHI[Hitachi Semiconductor]
Part No. 2SJ483
OCR Text ... * Low on-resistance R DS(on) = 0.08 typ (at VGS = -10 V, I D = -2.5 A) * 4V gate drive devices. * Large current capacitance ID = -5 A Outline TO-92MOD. D G 3 S 2 1 1. Source 2. Drain 3. Gate 2SJ483 Absolute Maximu...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 42.73K  /  9 Page

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    2SJ484

HITACHI[Hitachi Semiconductor]
Part No. 2SJ484
OCR Text ... * Low on-resistance R DS(on) = 0.18 typ. (at V GS = -10V, ID = -1A) * Low drive current * High speed switching * 4V gate drive devices. Outline UPAK 2 3 1 4 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SJ484 Absolute M...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 42.55K  /  9 Page

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    2SJ485 2SJ485TP-FA

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ485 2SJ485TP-FA
OCR Text ... unit:mm 2083B [2SJ485] 6.5 5.0 4 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 1 2 3 7.5 0.5 2.3 2....4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz See specified Test Circuit See specified Test ...
Description TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-252VAR
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 42.21K  /  4 Page

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    2SJ486

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ486
OCR Text ... * Low on-resistance R DS(on) = 0.5 typ. (at V GS = -4V, ID = -100 mA) * 2.5V gate drive devices. * Small package (MPAK). Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SJ486 Absolute Maximum Ratings (Ta = 25C) ...
Description RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开
Silicon P Channel MOS FET Low FrequencyPower Switching
Silicon P-Channel MOS FET

File Size 40.30K  /  8 Page

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    2SJ496

HITACHI[Hitachi Semiconductor]
Part No. 2SJ496
OCR Text ... * Low on-resistance R DS(on) = 0.12 typ. (at VGS = -10 V, I D = -2.5 A) * 4V gate drive devices. * Large current capacitance ID = -5 A Outline TO-92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SJ496 Absolute Maximum Ra...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 49.68K  /  10 Page

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    2SJ499

SANYO[Sanyo Semicon Device]
Part No. 2SJ499
OCR Text ...nit : mm 2083B [2SJ499] 6.5 5.0 4 1.5 Low ON-state resistance. 4V drive. 2.3 0.5 0.85 0.7 0.8 1.6 5.5 7.0 1.2 7.5 0.6 0.5 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP ...
Description Load Switching Applications

File Size 31.35K  /  4 Page

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    2SJ501

SANYO[Sanyo Semicon Device]
Part No. 2SJ501
OCR Text ...sions unit:mm 2091A [2SJ501] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications Absolute Max...4V ID=-50mA, VGS=-2.5V -0.5 0.2 1.0 420 630 600 1000 Conditions Ratings min -20 -10 10 -1.5 typ max ...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 237.49K  /  4 Page

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    2SJ502

Sanyo Electric Co., Ltd.
Sanyo Semicon Device
Part No. 2SJ502
OCR Text ...sions unit:mm 2091A [2SJ502] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications Absolute Max...4V -1.0 300 800 360 690 600 970 Conditions Ratings min -30 -10 10 -2.5 typ max Unit V A A V ms m m ...
Description Ultrahigh-Speed Switching Applications 超高速开关应
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 169.75K  /  4 Page

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    2SJ503 2SJ503TP-FA

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ503 2SJ503TP-FA
OCR Text ... unit:mm 2083B [2SJ503] 6.5 5.0 4 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 1 2 3 7.5 0.5 2.3 2....4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit See specified Test ...
Description TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-251VAR 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 4A条(丁)|51VAR
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 4A条(丁)|52VAR
P-Channel Silicon MOSFET DC/DC Converter Applications

File Size 86.59K  /  4 Page

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For 0.4v ms Found Datasheets File :: 15440    Search Time::2.344ms    
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