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BSA150B NM65N BCR1A NJM2063A 20N60S CM306 E004037 ISL887
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  0.0077 Datasheet PDF File

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    HITACHI[Hitachi Semiconductor]
Part No. 2SD1970
OCR Text ...Collector 3. Base ID 32 k (Typ) 0.4 k (Typ) 1 1 2 3 2SD1970 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current C to ...
Description Silicon NPN Epitaxial

File Size 31.11K  /  6 Page

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    2SD2240 2SD2240A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2240 2SD2240A
OCR Text ...nit: mm s Features q q q 0.4 0.80.1 0.4 0.2-0.05 0.15-0.05 +0.1 High collector to emitter voltage VCEO. Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the t...
Description Silicon NPN epitaxial planer type

File Size 35.96K  /  2 Page

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    Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD2242A 2SD2242
OCR Text ...ion Unit: mm 5.00.1 10.00.2 1.0 s Features 13.00.2 4.20.2 q q q 2.50.2 High foward current transfer ratio hFE High-speed switching Allowing supply with the radial taping (TC=25C) 90 s Absolute Maximum Ratings Parameter...
Description Silicon NPN triple diffusion planar type Darlington(For power amplification) 4 A, 60 V, NPN, Si, POWER TRANSISTOR

File Size 59.44K  /  2 Page

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    Panasonic
Part No. 2SD2242A
OCR Text ...ion Unit: mm 5.00.1 10.00.2 1.0 s Features 13.00.2 4.20.2 q q q 2.50.2 High foward current transfer ratio hFE High-speed switching Allowing supply with the radial taping (TC=25C) 90 s Absolute Maximum Ratings Parameter...
Description Silicon NPN triple diffusion planar type Darlington(For power amplification)

File Size 65.46K  /  3 Page

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    Panasonic
Part No. 2SD2242
OCR Text ... 1.20.1 1.480.2 90 C 1.0 2.250.2 18.00.5 Solder Dip I Absolute Maximum Ratings TC = 25C Parameter Collector to base voltage Collector to emitter voltage 2SD2242 2SD2242A 2SD2242 2SD2242A VEBO ICP IC TC = 25C Ta = 25C Tj Tstg...
Description Power Device - Power Transistors - Others

File Size 69.69K  /  4 Page

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    2SD2398

ROHM
Part No. 2SD2398
OCR Text ...nsions (Units : mm) 2SD2195 1.0 1.5 0.4 4.0 2.5 0.5 (1) 3.0 0.5 (3) 4.5 1.6 (2) (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 1.5 0.4 !Absolute maximum ratings (Ta = 25C) Parameter Collector-ba...
Description Power Transistor (100V / 2A)

File Size 70.45K  /  2 Page

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    2SJ643

Sanyo Semicon Device
Part No. 2SJ643
OCR Text 0 4 1.5 1.5 2.3 0.5 6.5 5.0 4 2.3 0.5 7.0 5.5 5.5 7.0 0.8 1.6 0.8 1.2 7.5 0.5 1 0.6 2 3 2.5 0.85 0.7 0.85 0.5 0.6 1 2 3 1.2 0 0.2 2.3 2.3 2.3 2.3 1.2 2SJ643...
Description P CHANNEL MOS SILICON TRANSISTOR

File Size 310.99K  /  4 Page

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    IRF[International Rectifier]
Part No. 30CTH02S 30CTH02-1 30CTH02 30CTH02FP 30CTH02-1TRRPBF
OCR Text ...o lead 5mm from package body 0.92 1.05 0.78 0.85 5 57 8 10 300 - IR Reverse Leakage Current - CT LS Junction Capacitance Series Inductance - Dynamic Recovery Characteristics @ TC = 25C (unless otherwise specified) P...
Description 15 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA
Hyperfast Rectifier

File Size 289.75K  /  10 Page

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    30CTH03PBF 30CTH03

IRF[International Rectifier]
Part No. 30CTH03PBF 30CTH03
OCR Text ...lead 5mm from package body 1.0 1.25 0.85 0.95 8 38 8 40 200 - IR Reverse Leakage Current - CT LS Junction Capacitance Series Inductance - Dynamic Recovery Characteristics @ TC = 25C (unless otherwise specified) Para...
Description Hyperfast Rectifier

File Size 191.89K  /  7 Page

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    IRF[International Rectifier]
Part No. 30CTH03
OCR Text ...lead 5mm from package body 1.0 1.25 0.85 0.95 8 38 8 40 200 - IR Reverse Leakage Current - CT LS Junction Capacitance Series Inductance - Dynamic Recovery Characteristics @ TC = 25C (unless otherwise specified) Para...
Description 300V 30A HyperFast Discrete Diode in a TO-220AB package
Hyperfast Rectifier

File Size 125.48K  /  7 Page

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