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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM120U10SAG
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| OCR Text |
... 125C
Typ
VGS = 10V, ID = 58A VGS = VDS, ID = 20mA VGS = 30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 116A Inductive switching @ 125C VGS = 15V VBus = 800V ID = 116A R G =1.2 Inductive switchin... |
| Description |
Single switch Series & parallel diodes MOSFET Power Module
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| File Size |
265.55K /
6 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APTM120U10SA
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| OCR Text |
... 125C
Typ
VGS = 10V, ID = 58A VGS = VDS, ID = 20mA VGS = 30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 116A Inductive switching @ 125C VGS = 15V VBus = 800V ID = 116A R G =1.2 Inductive switchin... |
| Description |
Single switch Series & parallel diodes MOSFET Power Module
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| File Size |
290.83K /
6 Page |
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it Online |
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Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
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| Part No. |
BYY58A-800 BYY57A BYY57A-100 BYY57A-150 BYY57A-200 BYY57A-300 BYY57A-400 BYY57A-600 BYY57A-700 BYY57A-75 BYY57A-800 BYY58A BYY58A-100 BYY58A-150 BYY58A-200 BYY58A-300 BYY58A-400 BYY58A-500 BYY58A-600 BYY58A-700 BYY58A-75 BYY57A-500
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| OCR Text |
58A are hermetically sealed 50Adiodes, which are available in different reverse voltage classes up to 800V. The diodes can be delivered with limited forward voltage and reverse current differences for parallel connecting in rectifier stacks... |
| Description |
50A Silicon Power Rectifier Diode 50 A, 100 V, SILICON, RECTIFIER DIODE
50A Silicon Power Rectifier Diode 50 A, 300 V, SILICON, RECTIFIER DIODE
50A Silicon Power Rectifier Diode 50 A, 600 V, SILICON, RECTIFIER DIODE
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| File Size |
134.34K /
5 Page |
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it Online |
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California Micro Devices Corporation
CALMIRCO[California Micro Devices Corp]
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| Part No. |
CM3106-12SN CM3106 CM3106-12SB CM3106-12SH CM3106-12SM
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| OCR Text |
...04
increases from 0.42A to 0.58A for the CM3106-12SN and a maximum instantaneous current of 2A should not be exceeded for more than 29% of the time. For CM3106-12SB, the maximum RMS current increases from 1.3A to 2.2A. Thus, the maximum ... |
| Description |
2 Amp Source/ Sink Bus Termination Regulator
2.0A Source/Sink Bus Termination Regulator
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| File Size |
976.72K /
11 Page |
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it Online |
Download Datasheet |
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California Micro Devices Corporation
CALMIRCO[California Micro Devices Corp]
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| Part No. |
CM310701S CM3107 CM3107-00SB CM3107-00SH CM3107-00SM CM3107-00SN CM3107-12SH
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| OCR Text |
...rrent increases from 0.42A to 0.58A for CM3107-00SN and maximum
(c) 2004 California Micro Devices Corp. All rights reserved.
instantaneous current of 2A should not be exceeded 29% of the time. For CM3107-00SB, the maximum RMS current in... |
| Description |
2 Amp Source/ Sink Bus Termination Regulator for DDR Memory and Front Side Bus Applications
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| File Size |
1,202.54K /
13 Page |
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it Online |
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CALMIRCO[California Micro Devices Corp]
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| Part No. |
CM3196-12SN CM3196 CM3196-12SB CM3196-12SH CM3196-12SM
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| OCR Text |
...rrent increases from 0.42A to 0.58A for CM3196-12SN and maximum
(c) 2004 California Micro Devices Corp. All rights reserved. 04/22/04
instantaneous current of 2A should not be exceeded 29% of the time. For CM3196-12SB, the maximum RMS c... |
| Description |
2.0A Source/Sink DDR-I, -II Bus Termination Regulator
2A Sink/Source DDR-I, -II Bus Termination Regulator
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| File Size |
350.79K /
13 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDC658AP
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| OCR Text |
...ng Information
Device Marking .58A Device FDC658AP Reel Size 7inch Tape Width 8mm Quantity 3000 units
(c)2006 Fairchild Semiconductor Corporation FDC658AP Rev. B (W)
1
www.fairchildsemi.com
FDC658AP Single P-Channel Logic Level... |
| Description |
Single P-Channel Logic Level PowerTrench? MOSFET -30V, -4A, 50mOhm
Single P-Channel Logic Level PowerTrench㈢ MOSFET -30V, -4A, 50mOhm
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| File Size |
228.80K /
5 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDU8880
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| OCR Text |
58A, 10m
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate... |
| Description |
N-Channel PowerTrench MOSFET 30V, 58A, 10m
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| File Size |
197.83K /
11 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFPS3815PBF
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| OCR Text |
...ID = 250A --- S VDS = 50V, ID = 58A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V 390 ID = 58A 80 nC VDS = 120V 230 VGS = 10V --- VDD = 75V --- ID = 58A ns --- RG = 1.03 --- VGS = 10V D Betwe... |
| Description |
Advanced Process Technology
HEXFET Power MOSFET
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| File Size |
128.76K /
8 Page |
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it Online |
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APEX[Apex Microtechnology]
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| Part No. |
PA12A PA12
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| OCR Text |
... LOAD COMMON 50V .30A 2.4A 40V .58A 2.9A 35V .87A 3.7A 30V 1.5A 4.1A 25V 2.4A 4.9A 20V 2.9A 6.3A 15V 4.2A 8.0A These simplified limits may be exceeded with further analysis using the operating conditions for a specific application.
GENER... |
| Description |
POWER OPERATIONAL AMPLIFIERS
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| File Size |
174.48K /
4 Page |
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it Online |
Download Datasheet |
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