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CDIL[Continental Device India Limited]
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Part No. |
CSB1370 CSB1370F CSB1370D CSB1370E
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Description |
30.000W Medium Power PNP Plastic Leaded transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. 30.000W Medium Power PNP Plastic Leaded transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. 30.000W Medium Power PNP Plastic Leaded transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. PNP Silicon Epitaxial Power transistor
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File Size |
88.37K /
3 Page |
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it Online |
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Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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Part No. |
NDT2955 NDT2955J23Z
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Description |
transistor | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 2.5AI(四)|的SOT - 223 P-Channel Enhancement Mode Field Effect transistor2.5A60V.3ΩP沟道增强型场效应管(漏电2.5A, 漏源电压-60v,导通电.3Ω
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File Size |
90.86K /
6 Page |
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it Online |
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TE Connectivity, Ltd. Aeroflex, Inc.
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Part No. |
ECG130MP ECG152 ECG153 ECG155 ECG153MP ECG159MCP ECG158
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Description |
Finger guards Round type - suction side - Adaptation machine-Frame size : 200mm; Surface Finishing: Cation electropainting; Adaptation Machine: San Ace 200(suction side); transistor | BJT | NPN | 60V V(BR)CEO | 7A I(C) | TO-220 transistor | BJT | NPN | 20V V(BR)CEO | 3A I(C) | TO-3VAR transistor | BJT | PNP | 60V V(BR)CEO | 7A I(C) | TO-220AB transistor | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92 晶体管|晶体管|进步党| 80V的五(巴西)总裁| 1A条一(c)|2 transistor | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-1 晶体管|晶体管|进步党| 32V的五(巴西)总裁| 1A条一(c)|
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File Size |
114.29K /
1 Page |
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it Online |
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Price and Availability
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