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  -1a -60v bipolar transistor Datasheet PDF File

For -1a -60v bipolar transistor Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    CDIL[Continental Device India Limited]
Part No. CSB1370 CSB1370F CSB1370D CSB1370E
Description 30.000W Medium Power PNP Plastic Leaded transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE.
30.000W Medium Power PNP Plastic Leaded transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE.
30.000W Medium Power PNP Plastic Leaded transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE.
PNP Silicon Epitaxial Power transistor

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    Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. NDT2955 NDT2955J23Z
Description transistor | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 2.5AI(四)|的SOT - 223
P-Channel Enhancement Mode Field Effect transistor2.5A60V.3ΩP沟道增强型场效应管(漏电2.5A, 漏源电压-60v,导通电.3Ω

File Size 90.86K  /  6 Page

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    2SA1585S 2SB1424 A5800357 2SB1424Q 2SA1585SR

ROHM[Rohm]
Rohm CO.,LTD.
Part No. 2SA1585S 2SB1424 A5800357 2SB1424Q 2SA1585SR
Description transistor | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SPAK
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
transistors > Medium Power bipolar transistors(0.5W-1.0W)
transistors > Small Signal bipolar transistors(up to 0.6W)
Low Vce(sat) transistor (-20V, -3A)
From old datasheet system
Low VCE(sat) transistor(低VCE(sat)晶体
Low Vce(sat) transistor (-20V/ -3A)

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    2N2208 2N1726 2N1678 2N3803 2N1633 2N1813 2N1811 2N1809 2N2143A 2N1649 2N2160 2N1544 2N1564 2N1637 2N1608 2N1636 2N1606

Thomas
Glenair, Inc.
Semtech, Corp.
Microchip Technology, Inc.
SUSUMU Co., Ltd.
Electronic Theatre Controls, Inc.
Bel Fuse, Inc.
Part No. 2N2208 2N1726 2N1678 2N3803 2N1633 2N1813 2N1811 2N1809 2N2143A 2N1649 2N2160 2N1544 2N1564 2N1637 2N1608 2N1636 2N1606 2N1653 2N1612 2N1905 2N1922 2N1611 2N2140 2N1651 2N1652 2N1545 2N2075 2N3046/78 2N1543 2N1607 2N3052/78 2N3048/78 2N2078A 2N3050/78 2N3044/78 2N3047/78 2N2148 2N2138A 2N1646 2N3043/78 2N2042A 2N1672 2N1820 2N1709 2N1892 2N2141A 2N2147
Description 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
transistor | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-9
transistor | BJT | PNP | 60V V(BR)CEO | TO-9
transistor | BJT | PAIR | PNP | 60V V(BR)CEO | 50MA I(C) | TO-71
68HC11/Bidirectional-Compatible µP Reset Circuit
Open-Drain SOT µP Reset Circuit
UNIJUNCTION transistor|25UA I(P)|TO-5
transistor | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-5
transistor | BJT | PNP | 10MA I(C) | TO-1
transistor | BJT | PNP | 50V V(BR)CEO | 6A I(C) | TO-3
transistor | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-37
transistor | BJT | PNP | 60V V(BR)CEO | 25A I(C) | TO-41
transistor | BJT | PNP | 65V V(BR)CEO | 15A I(C) | TO-67
transistor | BJT | PAIR | NPN | 45V V(BR)CEO | 30MA I(C) | TO-78
transistor | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-5
晶体管|晶体管|进步党| 40V的五(巴西)总裁| 5A条一(c)|
transistor | BJT | PNP | 30V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 30V的五(巴西)总裁| 3A条一(c)|
transistor | BJT | PNP | 12V V(BR)CEO | 50MA I(C) | TO-18 晶体管|晶体管|进步党| 12V的五(巴西)总裁| 50mA的一(c)|8
transistor | BJT | PAIR | NPN | 45V V(BR)CEO | 30MA I(C) | FP 晶体管|晶体管|一对|叩| 45V的五(巴西)总裁| 30mA的一(c)|计划生育
Open-Drain SOT &#181;P Reset Circuit 晶体管|晶体管|进步党| 55V的五(巴西)总裁| 200mA的一(c)|
transistor | BJT | NPN | 40V V(BR)CEO | TO-5 晶体管|晶体管|叩| 40V的五(巴西)总裁|
transistor | BJT | NPN | 250V V(BR)CEO | 15A I(C) | STF-1/2 晶体管|晶体管|叩| 250V五(巴西)总裁|5A一(c)|培训基金- 1 / 2
transistor | BJT | NPN | 30V V(BR)CEO | 2A I(C) | TO-8 晶体管|晶体管|叩| 30V的五(巴西)总裁|甲一(c)|
transistor | BJT | PNP | 15V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|进步党| 15V的五(巴西)总裁| 300mA的一(c)|
transistor | BJT | PNP | 65V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 65V的五(巴西)总裁| 3A条一(c)|
5-Pin &#181;P Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路

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    IRG4PH40K

IRF[International Rectifier]
Part No. IRG4PH40K
Description 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE bipolar transistor(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 154.31K  /  8 Page

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    IRG4BC29K IRG4BC30K IRG4BC30

IRF[International Rectifier]
Part No. IRG4BC29K IRG4BC30K IRG4BC30
Description 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE bipolar transistor(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

File Size 135.84K  /  8 Page

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    DXT2010P5 DXT2010P5-13 DXT2010P5-15

Diodes Incorporated
Part No. DXT2010P5 DXT2010P5-13 DXT2010P5-15
Description 60V NPN MEDIUM POWER transistor PowerDI垄莽5
60V NPN MEDIUM POWER transistor PowerDI?5

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Part No. 2SD2394E 2SD2318F5E
Description transistor | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR
transistor | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-252

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    TE Connectivity, Ltd.
Aeroflex, Inc.
Part No. ECG130MP ECG152 ECG153 ECG155 ECG153MP ECG159MCP ECG158
Description Finger guards Round type - suction side - Adaptation machine-Frame size : 200mm; Surface Finishing: Cation electropainting; Adaptation Machine: San Ace 200(suction side);
transistor | BJT | NPN | 60V V(BR)CEO | 7A I(C) | TO-220
transistor | BJT | NPN | 20V V(BR)CEO | 3A I(C) | TO-3VAR
transistor | BJT | PNP | 60V V(BR)CEO | 7A I(C) | TO-220AB
transistor | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92 晶体管|晶体管|进步党| 80V的五(巴西)总裁| 1A条一(c)|2
transistor | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-1 晶体管|晶体管|进步党| 32V的五(巴西)总裁| 1A条一(c)|

File Size 114.29K  /  1 Page

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    BUL146FG BUL146G

ON Semiconductor
Part No. BUL146FG BUL146G
Description bipolar Power TO220FP NPN 6A 400V; Package: TO-220 3 LEAD FULLPAK; No of Pins: 3; Container: Rail; Qty per Container: 50 6 A, 400 V, NPN, Si, POWER transistor, TO-220AB
SWITCHMODE NPN bipolar Power transistor

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For -1a -60v bipolar transistor Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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