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ST Microelectronics
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| Part No. |
STGB10NC60HD
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| OCR Text |
... advanced family of igbts, the powermesh ? igbts, with outstanding performances. the suffix ?h? identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) manta ... |
| Description |
N-CHANNEL IGBT
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| File Size |
461.67K /
15 Page |
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ST Microelectronics
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| Part No. |
P6NK90Z
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| OCR Text |
...s well established strip- based powermesh? layout. in addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. such series comple- ments st ful... |
| Description |
Search --To STP6NK90Z
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| File Size |
503.92K /
12 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STW11NB80
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| OCR Text |
powermesh ? mosfet n typical r ds(on) = 0.65 w n extremely high dv/dt capability n 30v gate to source voltage rating n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using the latest high voltag... |
| Description |
N-CHANNEL powermesh MOSFET
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| File Size |
107.41K /
8 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
STU8NC90Z STU8NC90ZI
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| OCR Text |
powermesh ? iii mosfet n typical r ds (on) = 1.1 w n extremely high dv/dt capability n gate-to-source zener diodes n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description the third generation of mesh ov... |
| Description |
N-CHANNEL 900V 1.1 OHM 7.6A MAX220 / I-MAX220 ZENER-PROTECTED powermesh III MOSFET
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| File Size |
119.94K /
10 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP7N80Z
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| OCR Text |
powermesh ? iii mosfet n typical r ds (on) = 1.3 w n extremely high dv/dt and capability gate to - source zener diodes n 100% avalanche tested n very low gate input resistance n gate charge minimized description the third generation of mesh... |
| Description |
N-Channel MOSFET
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| File Size |
329.54K /
11 Page |
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it Online |
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