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  ns-a1 Datasheet PDF File

For ns-a1 Found Datasheets File :: 38007    Search Time::3.438ms    
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    IRF1902 IRF1B902 IRF1902TR

International Rectifier
Part No. IRF1902 IRF1B902 IRF1902TR
OCR Text ...5V --- VDD = 10V --- ID = 1.0A ns --- RG = 53 --- VGS = 4.5V --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz Source-Drain Ratings and Charac...A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 1 2 3 4 .05...
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V)

File Size 105.83K  /  9 Page

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    IRF3000

IRF[International Rectifier]
Part No. IRF3000
OCR Text ...om case ) Units A W W/C V V/ns C Thermal Resistance Symbol RJL RJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ...A1 .0040 8 6 E 1 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 2 3 4 .050 BAS ...
Description 300V Single N-Channel HEXFET Power MOSFET in a SO-8 package
SMPS MOSFET

File Size 119.33K  /  8 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...V V V V V m m S nA A A nC nC nC ns ns ns ns nH nH nH pF pF pF VDD = 50 V; RD = 2.7 ; VGS = 10 V; RG = 5.6 Resistive load Measured tab to...A1 q D1 D L2(1) L1 Q L b1 1 2 3 b c e e 0 5 scale 10 mm ...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    IRF7807VD1

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF7807VD1
OCR Text ..., VGS = 0 VDD = 16V, ID = 7.0A ns VGS = 5V, RG= 2 Resistive Load Schottky Diode & Body Diode Ratings and Characteristics Parameter Diode...A1 B C D E e e1 H K 0 .10 (.00 4) L 8X 6 C 8X 1 2 3 4 e 6X e1 A K x 45 ...
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 116.12K  /  9 Page

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    IRF7807VD2 IRF7807VD2TR

IRF[International Rectifier]
Part No. IRF7807VD2 IRF7807VD2TR
OCR Text ..., VGS = 0 VDD = 16V, ID = 7.0A ns VGS = 5V, RG= 2 Resistive Load Schottky Diode & Body Diode Ratings and Characteristics Parameter Diode...A1 B C D E e e1 H K 0 .10 (.00 4) L 8X 6 C 8X 1 2 3 4 e 6X e1 A K x 45 ...
Description 30V FETKY - MOSFET and Schottky Diode in a SO-8 package
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 113.54K  /  9 Page

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    IRF7807V

IRF[International Rectifier]
Part No. IRF7807V
OCR Text ..., VGS = 0 VDD = 16V, ID = 7.0A ns VGS = 5V, RG= 2 Resistive Load Source-Drain Rating & Characteristics Parameter Diode Forward Voltage*...A1 B C D E e e1 H K 0 .10 (.00 4) L 8X 6 C 8X 1 2 3 4 e 6X e1 A K x 45 ...
Description N Channel Application Specific MOSFET

File Size 126.34K  /  8 Page

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    IRF7811AV IRF7811AVTR

International Rectifier
Part No. IRF7811AV IRF7811AVTR
OCR Text ..., VGS = 0 VDD = 16V, I D = 15A ns VGS = 5V Clamped Inductive Load pF VDS = 16V, VGS = 0 Reverse Transfer Capacitance Crss Sourc...A1 B C D E e e1 H K 0 .1 0 (.0 0 4 ) L 8X 6 C 8X 1 2 3 4 e 6X e1 A K x 4...
Description Si, SMALL SIGNAL, FET, MS-012AA
N-Channel Application-Specific MOSFETs

File Size 85.36K  /  6 Page

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    IRF9410

International Rectifier
Part No. IRF9410
OCR Text ...ture Range A W mJ A mJ V/ ns C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Symbol RJA Limit 50 U...A1 B C D E e e1 H K 0.10 (.0 04) L 8X 6 C 8X 1 2 3 4 e 6X e1 A K x 45 ....
Description Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

File Size 103.18K  /  7 Page

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    IRF9953

IRF[International Rectifier]
Part No. IRF9953
OCR Text ...ture Range A W mJ A mJ V/ ns C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Symbol RJA Limit 62.5 ...A1 B C D E e e1 H K 0.10 (.0 04) L 8X 6 C 8X 1 2 3 4 e 6X e1 A K x 45 ....
Description Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

File Size 98.36K  /  7 Page

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    IRF9956

IRF[International Rectifier]
Part No. IRF9956
OCR Text ...ture Range A W mJ A mJ V/ ns C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Symbol RJA Limit 62.5 ...A1 B C D E e e1 H K 0.10 (.0 04) L 8X 6 C 8X 1 2 3 4 e 6X e1 A K x 45 ....
Description Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

File Size 98.88K  /  7 Page

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